Allicdata Part #: | AUXAKF1405ZS-7P-ND |
Manufacturer Part#: |
AUXAKF1405ZS-7P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 120A D2PAK7 |
More Detail: | N-Channel 55V 120A (Tc) 230W (Tc) Surface Mount D2... |
DataSheet: | AUXAKF1405ZS-7P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Supplier Device Package: | D2PAK (7-Lead) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5360pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 230nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 88A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The AUXAKF1405ZS-7P transistor is one of the most commonly used field-effect transistors (FETs) in the electronics industry. It is a single-gate FET, meaning that it has one control terminal, or gate. The AUXAKF1405ZS-7P is a depletion-mode type device and, due to its unique design, offers an array of capabilities and advantages over other types of FETs. This article will discuss the typical applications and working principles of the AUXAKF1405ZS-7P transistor.
Typical Applications
The AUXAKF1405ZS-7P is well suited for a wide range of applications. It is most commonly used as a voltage-controlled switch and amplifier, where it is able to accurately control the flow of current between two points. Due to its high input impedance, it can draw very little current compared to other types of FETs, making it ideal for low-power applications. It is also commonly used in linear applications, as it is able to accurately control the output of current from a given input signal. Due to its robust design and its ability to withstand large amounts of current and voltage, the AUXAKF1405ZS-7P is also commonly used in power electronic applications.
Working Principle
The AUXAKF1405ZS-7P is a depletion-mode type transistor. As with any other transistor, it consists of a gate, a source, and a drain. The source and the drain connect to a supply voltage while the gate is connected to an input voltage. When a voltage is applied to the gate, it causes a depletion of electrons near the gate, which then allows current to flow between the source and the drain. The amount of current that can flow through the transistor depends on the magnitude of the input voltage, and can be accurately controlled by adjusting the input voltage.
As with most FETs, the AUXAKF1405ZS-7P has an inherent voltage-controlled switch capability. In this application, the gate voltage serves as the control signal: when a logic signal is applied to the gate (e.g. 0V for logic 0 and 5V for logic 1), the switch is either open or closed. This makes the AUXAKF1405ZS-7P an ideal device for switching and controlling the flow of current in a circuit.
Advantages
The AUXAKF1405ZS-7P has several advantages over other types of FETs. It is a low-cost device and has a relatively low threshold voltage. This allows the transistor to be switched more quickly compared to other types of FETs, as the gate voltage does not have to reach a very high level before the current begins to flow. In addition, the AUXAKF1405ZS-7P has a low input capacitance and requires very low drive currents. This makes the AUXAKF1405ZS-7P ideal for low power applications where the power consumption must be low.
The AUXAKF1405ZS-7P is also very robust and can handle large amounts of current and voltage. It is capable of operating over an extended temperature range and has a wide safe operating area and rugged gate oxide layer. This makes the transistor ideal for use in harsh environments or for high voltage and/or current applications.
Conclusion
The AUXAKF1405ZS-7P is a versatile and powerful field-effect transistor. It is a low-cost and low-power device, making it ideal for a wide range of applications. Its unique design offers a wide range of capabilities and benefits, such as high robustness, low input capacitance, and fast switching times. It is well suited for low-power and linear applications, as well as power electronic applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
AUXAKF1405ZS-7P | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 120A D2PA... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...