AUXFN8403TR

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AUXFN8403TR is a kind of single enhancement N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by the popular semiconductor electronics company Diodes Incorporated. It is of a standard 3-pin TO-252 package and features a low on-resistance of 2.2 Ω and a low gate-charge of 2.6 nC. It has a wide range of applications in power controls, DC/DC converters, load switching, signal switching, current sensing and voltage level translation, making it a popular choice for commercial and industrial power electronics projects.

Its primary job is as a low-side switch which allows the connection and disconnection of the load from the power supply. It is a voltage-controlled device, so it does not require any biasing current on its gate pin for the control of the power device switching. Here\'s how the device works in detail:

When a logic high voltage (VRG) is applied to the Gate Pin (G) from a microcontroller or other digital control circuitry, it turns on the enhancement mode MOSFET, by inducing a semiconductor depletion region between the source (S) and the drain (D). This allows current to flow through the Load, without any biasing current in the Gate Pin. The current that flows through the load is known as the Drain Current (ID).

When the logic low voltage (VRG) is applied to the Gate, it turns off the MOSFET and no current can flow through the Load. This allows the load to be disconnected from the power supply when not in use.

Aside from low-side switching applications, AUXFN8403TR can also be used for current sensing, voltage level translation, and pulse generator applications. As an example, in current sensing applications, the device is used in a \'sense\' arrangement, where it is Forward biased to conduct a reference current and a sensing resistor is placed between the device\'s Source and Drain. The observing circuitry then \'senses\' the voltage drop across the resistor to measure the reference current.

In pulse generation applications, the device is used in a \'delay\' configuration, where it is reverse-biased and pulses of current are fed to the Gate and the device is able to turn on and off by updating the logic levels of the Gate Pin, allowing the generation of pulse width and pulse position modulated outputs that can be used to drive a power device.

In voltage level translation applications, AUXFN8403TR is used to convert input signals into output signals that are of higher or lower amplitude. It operates in a \'buffer\' mode, where it translates the input voltage levels without affecting their shape or magnitude. This is particularly useful when the input voltage levels and output voltage levels differ, such as in translation between TTL and CMOS levels.

In summary, AUXFN8403TR is a single Enhancement N-channel MOSFET manufactured by Diodes Incorporated that is specifically designed for low-side switching applications. It has low on-resistance and low gate-charge and is suitable for applications such as power controls, DC/DC converters, load switching, signal switching, current sensing, and voltage level translation. Its versatile design makes it a popular choice for commercial and industrial power electronics projects.

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