AUXMOS20956STR

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The AUXMOS20956STR is an enhancement-mode, voltage-driven, negative-channel MOSFET transistor, commonly referred to as a so-called “Depletion-Mode FET” (DMFET). This type of MOSFET has become increasingly important in the design of digital circuits due to its ability to combine high-frequency characteristics with relatively low gate leakage. In addition, the AUXMOS20956STR has excellent breakdown voltage and current ratings, making it a suitable choice for applications in harsh electro-magnetic fields where high noise immunity is required.

The AUXMOS20956STR is typically used for high frequency switching, amplification, and level-shifting applications. Its high speed characteristics feature low switching times and improved noise immunity. The device is capable of passing high frequency signals of up to several hundred MHz, making it suitable for high speed applications such as AC/DC power conversion, audio preamplifiers, pulse width modulation, high voltage logic, and RF/microwave applications.

The AUXMOS20956STR operates with a voltage supply of 6V and a maximum drain current rating of 0.11A. It is composed of two series-connected MOSFETs, with each one having a terminal connected to a source, a terminal connected to a drain, and a terminal connected to a gate. The source and drain of the device are typically connected to the power source and load, respectively, while the gate is connected to a voltage controlled by an external circuit. By applying an external voltage to the gate, the current between the drain and the source can be modulated and made to flow in either direction.

The working principle of the AUXMOS20956STR can be explained by the behavior of its gate-channel capacitance when a voltage is applied to the gate. The gate-channel capacitance acts like a small capacitor, which stores electrical charge and subsequently decays over time. When a voltage is applied to the gate, it attracts charges to the gate and thereby produces a current between the drain and the source, which is referred to as the “dynamic drain-source current”. This, in turn, causes the gate-channel capacitance to decay, thus, providing a damping effect to the voltage signal, which improves the noise immunity of the circuit.

The AUXMOS20956STR is an ideal choice for noise-sensitive applications due to its excellent noise immunity. Additionally, its high speed switching, low gate leakage and improved power dissipation characteristics make it suitable for various demanding applications. The device is also commonly used in digital logic circuits, such as logic level shifters, frequency modulation, and pulse-width modulation.

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