AUXS20956S

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AUXS20956S is a single N-type metal oxide semiconductor field effect transistor (MOSFET). This device is designed for use with low-side switching applications, such as gate drivers, power vehicle control switches, high-side controllable relay drivers and high-side current sense switching. It is also suitable for other applications where a low on-resistance, low gate-threshold voltage and fast switching times are required.

Overview

The AUXS20956S is a highly versatile MOSFET. It has an N-channel enhancement mode and uses a unique characteristic of vertical Cell FETs to enable it to offer superior features such as lower gate-threshold voltage (Vgs), lower on-resistance (RDS(on)) and faster switching times. In addition, it comes with an on-chip reverse voltage protection.

This device has an On-state drain-source current of 20A and a drain-source voltage rating of ±30V with integrated body diode. It is manufactured in a small, easy-to-handle WFET (Wonka Fitting Technology) package extra-light size, making it ideal for space-constrained applications. The AUXS20956S MOSFET also offers an ESD protection of up to 2.5kV and is RoHS compliant.

Benefits

The AUXS20956S MOSFET offers a number of benefits that make it ideal for a variety of applications. Its vertical Cell FET structure, low gate-threshold voltage, low on-resistance and fast switching times make it a great choice for low-side switching applications. Moreover, it can provide up to 20A of continuous drain-source current and a drain-source voltage rating of ±30V with integrated body diode. Additionally, the device has an ESD protection of up to 2.5kV and comes in an extra-light WFET package for easy integration into small form factor designs.

Applications

The AUXS20956S MOSFET is ideal for a wide range of low-side switching applications, such as gate drivers, power vehicle control switches, high-side controllable relay drivers and high-side current sense switching. It is also suitable for other general-purpose applications that require low on-resistance, low gate-threshold voltage and fast switching times.

Working Principle

The AUXS20956S MOSFET works in an "enhancement mode", which means that it does not conduct when the Gate-Source voltage (VGS) is below the gate threshold voltage (Vth). When VGS is above the Vth, the MOSFET will begin to conduct and allow current to flow from the Drain to the Source. This leads to "Channel Enhancement", where the width of the channel increases, resulting in a lower on-resistance and a higher current-handling capacity. The device can also provide reverse voltage protection, which ensures that the device will not be damaged by current flowing from the Source to the Drain.

The AUXS20956S MOSFET is a great choice for low-side switching applications due to its low on-resistance, low gate-threshold voltage and fast switching times. It is also capable of providing up to 20A of continuous drain-source current and can operate with a Drain-Source voltage rating of ±30V with integrated body diode. In addition, it has an ESD protection of up to 2.5kV and is offered in a small WFET package, which makes it an ideal choice for space-constrained applications.

The specific data is subject to PDF, and the above content is for reference