BAR 64-02LRH E6433 Allicdata Electronics
Allicdata Part #:

BAR64-02LRHE6433-ND

Manufacturer Part#:

BAR 64-02LRH E6433

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE RF SGL 150V 100MA TSLP2-7
More Detail: RF Diode PIN - Single 150V 100mA 250mW PG-TSLP-2
DataSheet: BAR 64-02LRH E6433 datasheetBAR 64-02LRH E6433 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 150V
Current - Max: 100mA
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: 150°C (TJ)
Package / Case: SOD-882
Supplier Device Package: PG-TSLP-2
Base Part Number: BAR64
Description

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BAR 64-02LRH E6433 is a high-speed diode which is used in a range of different applications. It is a silicon rectifier diode optimized for use in RF and microwave applications. The diode is commonly used as an RF detector diode, harmonic mixers, limiter, radio frequency step recovery diode, and as a quieting switch for IF gain control. It is also used for limiting and thermal imaging.

The BAR 64-02LRH E6433 is especially designed for high-frequency operation up to 18 GHz with a peak repetitive reverse voltage of 20V and a typical forward current of 50mA. It is an ultra-high-speed diode with a forward recovery time of 0.2 nanoseconds and a reverse recovery time of 0.8 nanoseconds. It is a low barrier diode with a barrier voltage of 0.14 volts.

The operating principle of the BAR 64-02LRH E6433 is based on the fact that the diode can be capacitively coupled to an electrical input or field. When an input signal with an appropriate frequency is supplied, the diode connects the input and output of the field together. This amplifies the signal and enables the device to be used for various purposes.

When used as an RF detector diode, the BAR 64-02LRH E6433 is typically connected in a reverse bias configuration. This configuration is used to maximize the impedance of the diode and avoid noise or spurious signals. It is commonly used to detect the presence of an RF signal or to measure its amplitude. The diode is also useful for monitoring the waveform of an RF signal, as it responds quickly to changes in the waveform.

The BAR 64-02LRH E6433 is also used as a mixer. It can be used to convert two signals of different frequencies into a new combined signal, which can be used for FM or AM modulation. The diode is also used for limiters, for example in an automatic gain control (AGC) system, where the amplitude of a signal is limited to a predetermined level. It is also used in radio frequency step recovery diode (SRD) circuits, which can be used to generate pulses of precise width and duration.

The BAR 64-02LRH E6433 is also commonly used in thermal imaging applications. It can be used to detect heat by detecting the absorption of infrared radiation. The diode acts as a detector, passing current only when infrared radiation is absorbed. The amount of current passing through the diode is then used to generate an image.

The BAR 64-02LRH E6433 is a versatile and useful diode, capable of performing multiple tasks in a variety of applications. It is a reliable, stable and high-performance diode optimized for RF and microwave applications. It has an ultra-fast response time and a low barrier voltage, making it ideal for many types of applications.

The specific data is subject to PDF, and the above content is for reference

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