BAR6402ELE6327XTMA1 Allicdata Electronics

BAR6402ELE6327XTMA1 Discrete Semiconductor Products

Allicdata Part #:

BAR6402ELE6327XTMA1TR-ND

Manufacturer Part#:

BAR6402ELE6327XTMA1

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE RF SGL 150V 100MA TSLP2-19
More Detail: RF Diode PIN - Single 150V 100mA 250mW TSLP-2-19
DataSheet: BAR6402ELE6327XTMA1 datasheetBAR6402ELE6327XTMA1 Datasheet/PDF
Quantity: 1000
15000 +: $ 0.03064
30000 +: $ 0.02873
75000 +: $ 0.02547
105000 +: $ 0.02451
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 150V
Current - Max: 100mA
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: 150°C (TJ)
Package / Case: SOD-882
Supplier Device Package: TSLP-2-19
Base Part Number: BAR6402
Description

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Among the wide range of diodes, BAR6402ELE6327XTMA1 is one type of RF diode that has wide usage in its application field. This semiconductor device works with the principle of PN junction diode, wherein two energies, electrons and holes, flow in opposite direction when the device is forward biased.

BAR6402ELE6327XTMA1 is specifically used in radio frequency applications which range from 30 kHz to 3 GHz. This wide range of applications is possible due to the junction that is formed of N-type and P-type materials. In this RF diode, these two materials create a diode that can be operated at low currents with the characteristic of negative differential resistance.

In certain applications within its operating frequency range, the BAR6402ELE6327XTMA1 can be used as a power doubler or mixer diode. It has a built-in amplifier that amplifies the signal and also controls the return loss. The RF power handling capability of this diode is up to 10 dBm, thus making it valuable device for many applications.

The working principle of this diode revolves around the PN junction structure. When the PN junction is induced by a forward bias voltage, electrons from the N-side and holes from the P-side combine at the junction. This combination results in current flow in the diode and the diode begins to conduct electricity. When the reverse bias voltage is applied to the PN junction, the electrons and holes repelling each other and the current contributes no more to the conduction.

The temperature coefficient of the BAR6402ELE6327XTMA1 diode is also very low due to the PN junction. This helps the diode to maintain the same amount of current even when the temperature changes. The transit time of the electrons and holes is negligible, thus allowing the diode to operate very quickly.

BAR6402ELE6327XTMA1 is a robust, reliable and efficient RF diode. Due to its operating frequency range, it is used in many applications such as switching, detection and signal amplification. The low power consumption and long lifetime of the diode make it an ideal choice for many applications. Furthermore, the easy installation and handling of the diode further increase its value.

The specific data is subject to PDF, and the above content is for reference

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