| Allicdata Part #: | BAR6704E6327HTSA1TR-ND |
| Manufacturer Part#: |
BAR6704E6327HTSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | DIODE SIL PIN 150V 200MA SOT-23 |
| More Detail: | RF Diode PIN - 1 Pair Series Connection 150V 200mA... |
| DataSheet: |  BAR6704E6327HTSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | PIN - 1 Pair Series Connection |
| Voltage - Peak Reverse (Max): | 150V |
| Current - Max: | 200mA |
| Capacitance @ Vr, F: | 0.55pF @ 5V, 1MHz |
| Resistance @ If, F: | 1 Ohm @ 10mA, 100MHz |
| Power Dissipation (Max): | 250mW |
| Operating Temperature: | 150°C (TJ) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
Description
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BAR6704E6327HTSA1 is a diode-type RF component suitable for various applications such as wireless communication, direct digital synthesis (DDS) or RF unlocking systems. It typically operates within the frequency range of 0.37GHz to 6GHz, providing a variety of functions including level detection, frequency conversion, amplifier bias adjustment, linear characteristic adjustments, and more.Based on its datasheet, the BAR6704E6327HTSA1 has an inclination angle of 40 degrees when used in horizontal mounting and an inclination angle of 60 degrees when used in vertical mounting. The diode consists of a highly sensitive PIN diode, encased in a high-shock mounting structure allowing it to withstand high mechanical stress. This enhances its reliability in high-speed and high-frequency applications. To understand its working principle, it is necessary to first define its type of diode. BAR6704E6327HTSA1 is a PIN diode because it has two terminals composed of a p-doped and an n-doped region, with a narrow intrinsic semiconductor layer in between. The narrow intrinsic layer is responsible for limiting the current flow in forward direction when connected to a voltage source. Once the electrons in the current flow reach the junction between the p-doped and n-doped regions, the electrons will be excited, leading to a decrease of their potential energy and an increase in their kinetic energy. As a result, the electrons will be forced to pass through the narrow intrinsic layer and this will limit the current flow.When the voltage source is removed from the device, the effect of having electrons excited will be reduced and the current flow will be reversed as well. This reversibility of current flow is the essence of PIN diode operation. Specifically, when a voltage source is connected to this device, electrons start to move in either forward or reverse directions depending on the applied voltage. This allows the device to effectively produce a bias voltage or alternating voltage current sources by controlling the applied voltage. In terms of its application field, the BAR6704E6327HTSA1 is mainly used in wireless communication systems. Due to its adjustable impedance which can vary in a broad range (1-10GHz/ 37-6GHz / 0.3MHz – 127MHz), it is useful in designing various components such as voltage-controlled oscillators (VCOs) or trans-impedance amplifiers (TIA).Furthermore, the device can also be used for detecting the level of RF signals and for frequency shifting applications. It is suitable for direct digital synthesis (DDS) frequencies up to 350MHz, capable of accurately setting modulation frequencies, and can be integrated in advanced electronic access and unlock systems.Overall, the BAR6704E6327HTSA1 is a highly versatile diode-type RF component. Its combination of low distortion, wide frequency range and high sensitivity level makes it suitable for various applications in wireless communication and unlocking systems.
The specific data is subject to PDF, and the above content is for reference
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