BAR6402VH6327XTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BAR6402VH6327XTSA1TR-ND |
Manufacturer Part#: |
BAR6402VH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE RF PIN 150V 100MA SC79 |
More Detail: | RF Diode PIN - Single 150V 100mA 250mW PG-SC79-2 |
DataSheet: | BAR6402VH6327XTSA1 Datasheet/PDF |
Quantity: | 33000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 150V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.35pF @ 20V, 1MHz |
Resistance @ If, F: | 1.35 Ohm @ 100mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | PG-SC79-2 |
Base Part Number: | BAR64 |
Description
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Application Field and Working Principle of BAR6402VH6327XTSA1
Diodes play an important role in the modern era of electronics, especially RF diodes. Among the many types of RF diodes, BAR6402VH6327XTSA1 is a high-performance Schottky diode specifically designed for use in a wide range of RF applications. This article will discuss the application field and working principle of BAR6402VH6327XTSA1.BAR6402VH6327XTSA1 is a high performance silicon Schottky diode with an average junction capacitance of only 0.73 pF, a typical reverse leakage current of 4 mA at 25 °C, and an average forward voltage drop of 0.6 V at 1 A. With its low-signal-loss construction, it is suitable for use in the fields of high-speed switching, low-noise amplification, direct sampling, and low-power amplifier applications.Moreover, the BAR6402VH6327XTSA1 has excellent common-mode noise immunity and stability, making it an ideal choice for RF applications. Additionally, because of its low power dissipation and capacitance characteristics, it is suitable for a wide variety of RF circuits, including high-selection receivers and low-noise amplifiers, digital phase-locked loops, mixers, and automatic level control circuits.The working principle of the BAR6402VH6327XTSA1 is primarily related to the junction capacitance phenomenon. In the device, there is a built-in junction capacitance which determines the oscillation frequency for a given voltage drop across the junction. The frequency of operation is determined by the value of the junction capacitance, which is in turn determined by the size and layout of the device. As a result, the BAR6402VH6327XTSA1 can be used to operate at a specific frequency, and can also be used with irregular waveform signals to help minimize the amplitude of their oscillations.The BAR6402VH6327XTSA1 is also well-suited for high-speed, low-noise amplification applications due to its low junction capacitance. Its low capacitance and high reverse breakdown voltage also make it a good choice for use in automatic gain control circuits. In addition, the device has a good reverse voltage recovery behavior, which makes it suitable for use in wide bandwidth antenna switches.The BAR6402VH6327XTSA1 has a wide range of applications and is suitable for RF frequency conversion and detection, as well as low phase noise applications such as LNAs and mixers. Its low junction capacitance and high reverse leakage current make it an excellent choice for use in high-speed switching, low-noise amplifiers, direct sampling, and low-power amplifier applications.In short, the BAR6402VH6327XTSA1 is a high-performance Schottky diode that is especially suitable for RF applications. This device is characterized by its low-signal-loss construction, excellent common-mode noise immunity and stability, and low junction capacitance and power dissipation. In addition, its good reverse voltage recovery behavior and excellent reverse breakdown voltage make it suitable for use in a wide variety of RF circuits.The specific data is subject to PDF, and the above content is for reference
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