| Allicdata Part #: | 1727-2552-2-ND |
| Manufacturer Part#: |
BAS116QAZ |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | DIODE GEN PURP 75V 300MA 3DFN |
| More Detail: | Diode Standard 75V 300mA (DC) Surface Mount DFN101... |
| DataSheet: | BAS116QAZ Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.03069 |
| 10000 +: | $ 0.02609 |
| 25000 +: | $ 0.02456 |
| 50000 +: | $ 0.02302 |
| 125000 +: | $ 0.02046 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 75V |
| Current - Average Rectified (Io): | 300mA (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 3µs |
| Current - Reverse Leakage @ Vr: | 5nA @ 75V |
| Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | 3-XDFN Exposed Pad |
| Supplier Device Package: | DFN1010D-3 |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are widely used in electronics. The BAS116QAZ is one of the most widely used rectifier diodes. It has a variety of uses, ranging from light load rectification, rectification of high-frequency low-power magnetization, reverse protection and various AC voltage rectification. The following article will discuss the application field and working principle of the BAS116QAZ.
Application Field
The BAS116QAZ rectifier diode is used for low power rectification in many different electronics applications. It is typically used for rectification of low voltage and low current AC signals, such as in power supplies, inverters and voltage converters. It is also used for reverse protection and other DC application areas. The device is well-suited for the protection of high-frequency, low-power circuits where high-speed switching and rectification are necessary.
Features
- Low Forward Voltage Drop
- High Frequency Switching
- Low Leakage Current
- Pulse Standoff Voltage
- Low Power Dissipation
- High Reverse Standoff Voltage
Working Principle
The BAS116QAZ is a single rectifier diode with a p-n junction structure. It is made of a semiconductor material and two electrodes. One of the electrodes is positive (the anode) and the other is negative (the cathode). When the anode is given a positive voltage, the diode becomes an open circuit, allowing electric current to flow through it. When the voltage is reversed and the cathode is given a positive voltage, the diode becomes a closed circuit, blocking the current.
When a positive voltage is given to the anode, the voltage drop across the diode will be a characteristic "knee" shape. This is because the resistance of the diode increases with a positive voltage and current. As the voltage increase, the diode will eventually reach a point of saturation at which the voltage drop remains constant. This is known as the cut-off voltage of the diode.
When a negative voltage is given to the cathode, the diode will become a closed circuit, blocking the current from flowing. This is known as the blocking voltage of the diode. The voltage at which it blocks current is typically higher than the cut-off voltage of the diode.
Conclusion
The BAS116QAZ is a single rectifier diode with a p-n junction structure. It is commonly used for low-power rectification in power supplies, inverters and voltage converters. The device has a low forward voltage drop, high frequency switching, low leakage current and low power dissipation. It is also capable of providing reverse protection in circuits. The cut-off voltage of the diode is typically lower than the blocking voltage.
The specific data is subject to PDF, and the above content is for reference
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| BAS19-G3-18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 100V 200MA... |
| BAS16WE6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE GEN PURP 80V 250MA ... |
| BAS19-HE3-18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 100V 200MA... |
| BAS16V-7 | Diodes Incor... | -- | 1000 | DIODE ARRAY GP 75V 200MA ... |
| BAS19-G3-08 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 100V 200MA... |
| BAS16M3T5G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
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| BAS116T-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 85V 215MA ... |
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BAS116QAZ Datasheet/PDF