Allicdata Part #: | BAS19WRVG-ND |
Manufacturer Part#: |
BAS19W RVG |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 200MA SOT323 |
More Detail: | Diode Standard 100V 200mA Surface Mount SOT-323 |
DataSheet: | BAS19W RVG Datasheet/PDF |
Quantity: | 1000 |
18000 +: | $ 0.02474 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 100V |
Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BAS19W RVG is a silicon NPN epitaxial planar transistor designed for use in low noise, high-gain, and general-purpose amplifier applications. Bulk Metal Foil technology provides excellent high-frequency performance and outstanding device stability. The BAS19W RVG is ideally suited forAudio amplifiers, low-voltage battery-powered systems, and small signal RF amplifiers.
The BAS19W RVG is a single, diffused type rectifier diode. It is designed for general purpose applications in low voltage, battery-powered systems and other low power, low frequency circuits. It can be used in a variety of applications including power supplies, rectifiers, pulse, and switching circuits. The BAS19W RVG is available in several configurations and includes a built-in voltage regulator that allows it to operate with a wide range of input voltages. The diode\'s low forward voltage has been optimized for high-frequency switching applications.
The BAS19W RVG consists of two diodes arranged in parallel; one that is connected in forward biased and the other in reversed biased. When connected to a power source, the forward biased diode acts as a rectifier, conducting current only in one direction and thereby blocking the reverse current. The reversed biased diode acts as a regulator, regulating the forward biased current and limiting the reverse current. The two diodes combine to provide an effective, efficient, and reliable switch.
The BAS19W RVG is manufactured using advanced fabrication techniques, such as through-silicon vias (TSVs) and silicon-on-insulator (SOI) technology. TSVs and SOI create a highly reliable diode by reducing power dissipation and providing superior heat extraction from the circuit. In addition, the diode is available in an extended voltage range allowing the use of a wider array of input voltages. The BAS19W RVG is an ideal choice for a wide variety of applications, including battery-powered systems, audio amplifiers, and low-power RF amplifiers.
The working principle of the BAS19W RVG is based on current-controlled rectification. It works by regulating the current through the diode, restricting the reverse current and allowing the forward current to flow. This allows the diode to act as a switch, allowing the current to flow in one direction when it is forward biased and blocking it when it is reverse biased. This provides a reliable and efficient switch solution for a variety of applications.
In summary, the BAS19W RVG is a single, diffused type rectifier diode designed for a variety of general purpose applications. It is manufactured using advanced fabrication techniques and has an extended voltage range to facilitate its use in a broad range of applications. The BAS19W RVG is ideal for low noise, high-gain, and general-purpose amplifier applications as well as audio amplifiers, low-voltage battery-powered systems, and small signal RF amplifiers. Its current-controlled rectification allows it to act as a reliable and efficient switch, making it a perfect choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BAS16D-HE3-08 | Vishay Semic... | 0.04 $ | 6000 | DIODE GEN PURP 75V 250MA ... |
BAS17,215 | Nexperia USA... | 0.06 $ | 1000 | DIODE GEN PURP 5V 200MA S... |
BAS16TR | SMC Diode So... | 0.03 $ | 222000 | DIODE GEN PURP 75V 200MA ... |
BAS16TT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS116TT1G | ON Semicondu... | 0.04 $ | 6000 | DIODE GEN PURP 75V 200MA ... |
BAS19-TP | Micro Commer... | 0.02 $ | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16VY,165 | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY GP 100V 200MA... |
BAS16VY,115 | Nexperia USA... | 0.05 $ | 1000 | DIODE ARRAY GP 100V 200MA... |
BAS16VY,125 | Nexperia USA... | 0.05 $ | 1000 | DIODE ARRAY GP 100V 200MA... |
BAS16HMFHT116 | ROHM Semicon... | 0.03 $ | 18000 | HIGH RELIABILITY AND SMAL... |
BAS16VY/APGX | Nexperia USA... | 0.05 $ | 1000 | BAS16VY/APG/SOT363/SC-88D... |
BAS16GWX | Nexperia USA... | -- | 1000 | DIODE GEN PURP 100V 215MA... |
BAS16LT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 75V 200MA ... |
BAS16WT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16HT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS19,235 | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 100V 200MA... |
BAS19,215 | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16T-7-F | Diodes Incor... | -- | 207 | DIODE GP 85V 75MA SOT523D... |
BAS116LT3G | ON Semicondu... | 0.02 $ | 10000 | DIODE GEN PURP 75V 200MA ... |
BAS16-HE3-08 | Vishay Semic... | -- | 15000 | DIODE GEN PURP 75V 150MA ... |
BAS16WS-HE3-08 | Vishay Semic... | 0.03 $ | 9000 | DIODE GEN PURP 75V 250MA ... |
BAS16GWJ | Nexperia USA... | -- | 60000 | DIODE GEN PURP 100V 215MA... |
BAS19LT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 120V 200MA... |
BAS16-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 75V 200MA ... |
BAS16HT1G | ON Semicondu... | -- | 40 | DIODE GEN PURP 100V 200MA... |
BAS16XV2T5G | ON Semicondu... | -- | 16000 | DIODE GEN PURP 75V 200MA ... |
BAS16X-TP | Micro Commer... | 0.02 $ | 56000 | DIODE GEN PURP 75V 200MA ... |
BAS16W,115 | Nexperia USA... | 0.02 $ | 48000 | DIODE GEN PURP 100V 175MA... |
BAS16P2T5G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16W-TP | Micro Commer... | -- | 204000 | DIODE GEN PURP 75V 100MA ... |
BAS1603WE6327HTSA1 | Infineon Tec... | 0.03 $ | 9000 | DIODE GEN PURP 80V 250MA ... |
BAS1602VH6327XTSA1 | Infineon Tec... | 0.03 $ | 18000 | DIODE GEN PURP 80V 200MA ... |
BAS16WS-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
BAS19 | ON Semicondu... | -- | 18000 | DIODE GEN PURP 120V 200MA... |
BAS116LT1G | ON Semicondu... | -- | 3000 | DIODE GEN PURP 75V 200MA ... |
BAS116LP3-7 | Diodes Incor... | -- | 70000 | DIODE GEN PURP 85V 215MA ... |
BAS19W-7-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 100V 200MA... |
BAS16H,115 | Nexperia USA... | 0.04 $ | 18000 | DIODE GEN PURP 100V 215MA... |
BAS16L,315 | Nexperia USA... | 0.04 $ | 120000 | DIODE GEN PURP 100V 215MA... |
BAS16SL | ON Semicondu... | -- | 16000 | DIODE GEN PURP 85V 150MA ... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...