BAS116LT3G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	75V
Current - Average Rectified (Io):	200mA (DC)
Voltage - Forward (Vf) (Max) @ If:	1.25V @ 150mA
Speed:	Small Signal =
Reverse Recovery Time (trr):	3µs
Current - Reverse Leakage @ Vr:	5nA @ 75V
Capacitance @ Vr, F:	2pF @ 0V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Operating Temperature - Junction:	-55°C ~ 150°C
Base Part Number:	BAS116

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Introduction of BAS116LT3GBAS116LT3G is a high efficiency, low-voltage, surface-mount single rectifier diode. It uses advanced Mega Shottky barrier technology and offers very low leakage current. Its maximum steady-state forward current is 0.2A, maximum repetitive reverse voltage is 75V, and maximum non-repetitive peak reverse voltage is 100V. The reverse current at 100V is typically 5µA and maximum peak surge current is 3A. Application Field and Working PrincipleBAS116LT3G is widely used in a variety of applications, including power supplies, battery-powered circuits, UPS systems, audio power amplifiers, and similar electrical circuit designs. It is often employed as series diode in a circuit to protect the sensitive electronics such as various LED lighting systems.The BAS116LT3G works as a single rectifier diode, allowing electric current to flow in one direction while blocking current in the opposite direction. In a single diode circuit, the anode (positive electrode) is connected to the circuit’s power source, while the cathode (negative) electrode is connected to the circuit’s load. When the circuit is closed, current flows only through the forward direction, from the anode to the cathode. In the forward direction, the diode has a low forward voltage drop and dissipates a relatively small amount of power. However, in the reverse direction, the diode can act as an insulator and no current flows. Performance CharacteristicsBAS116LT3G has several important performance characteristics that make it ideal for use in many electronic applications. It has a very low forward voltage drop under forward bias, providing better efficiency for the circuit design. The device also features very low reverse leakage current, which reduces power dissipation. The device is designed to handle high-speed switching applications, making it suitable for use in circuits that require stable and reliable operation, even when subjected to rapid changes in voltage or current. BAS116LT3G diodes can also provide excellent surge protection, making them an ideal choice for use in high-voltage applications. Finally, the device offers excellent thermal performance, making it suitable for use in even the most extreme thermal environments. The diode is constructed with a specialized plastic molding compound, making it resistant to high heat and vibration, which improves overall reliability and life expectancy. ConclusionIn summary, BAS116LT3G is a high efficiency and low-voltage single rectifier diode that offers excellent performance characteristics for many different applications. It features very low forward voltage, low reverse leakage current, and excellent thermal and surge protection, making it an ideal choice for use in a variety of electronic circuits and applications.

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