Allicdata Part #: | BAS16WE6327HTSA1TR-ND |
Manufacturer Part#: |
BAS16WE6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE GEN PURP 80V 250MA SOT323 |
More Detail: | Diode Standard 80V 250mA (DC) Surface Mount PG-SOT... |
DataSheet: | BAS16WE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io): | 250mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 1µA @ 75V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | BAS16W |
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Introduction
Diodes, which can be found in most electronic circuits, are a type of two-terminal semiconductor device that acts as an electrical valve, allowing current to flow in one direction, but not in the other. Rectifiers are a form of diode that are used to convert alternating current (AC) to direct current (DC). The BAS16WE6327HTSA1 is a single, surface-mounted Schottky diode, one type of rectifier. It is designed with a low voltage drop and low leakage current, making it suitable for use in signal processing applications.
Applications
The BAS16WE6327HTSA1 is used in many different applications across several industries. It is commonly used in power supplies, automotive applications, consumer electronics, and signal processing. It is especially suited for use in applications which require low voltage drops and low leakage current. In power supplies, for example, the low voltage drop allows for improved efficiency and a lower thermal burden. Additionally, its low current leakage means that it can be used in automotive applications which require reliable switching.
Working Principle
The working principle of the BAS16WE6327HTSA1 is based on the diode’s ability to allow current to flow in one direction but not the other. This creates a junction between the anode and cathode, allowing electrons to travel in one specific direction. The voltage drop across the diode is typically around 0.3 volts and the current leakage is very low. The diode performs its primary function of converting AC to DC, with the AC current being converted to a steady flow of DC current.
Conclusion
The BAS16WE6327HTSA1 is a single, surface-mounted Schottky diode and a type of rectifier that is used in many different applications across multiple industries. It has a low voltage drop and a low current leakage, which makes it ideal for use in power supplies, automotive applications, consumer electronics, and signal processing applications. Its working principle is based on the diode’s ability to allow current to flow in only one direction, creating a junction between the anode and cathode. The diode performs its primary function of converting AC to DC current with a voltage drop of 0.3 volts and a very low current leakage.
The specific data is subject to PDF, and the above content is for reference
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BAS16GWX | Nexperia USA... | -- | 1000 | DIODE GEN PURP 100V 215MA... |
BAS16LT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 75V 200MA ... |
BAS16WT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16HT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS19,235 | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 100V 200MA... |
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BAS116LT3G | ON Semicondu... | 0.02 $ | 10000 | DIODE GEN PURP 75V 200MA ... |
BAS16-HE3-08 | Vishay Semic... | -- | 15000 | DIODE GEN PURP 75V 150MA ... |
BAS16WS-HE3-08 | Vishay Semic... | 0.03 $ | 9000 | DIODE GEN PURP 75V 250MA ... |
BAS16GWJ | Nexperia USA... | -- | 60000 | DIODE GEN PURP 100V 215MA... |
BAS19LT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 120V 200MA... |
BAS16-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 75V 200MA ... |
BAS16HT1G | ON Semicondu... | -- | 40 | DIODE GEN PURP 100V 200MA... |
BAS16XV2T5G | ON Semicondu... | -- | 16000 | DIODE GEN PURP 75V 200MA ... |
BAS16X-TP | Micro Commer... | 0.02 $ | 56000 | DIODE GEN PURP 75V 200MA ... |
BAS16W,115 | Nexperia USA... | 0.02 $ | 48000 | DIODE GEN PURP 100V 175MA... |
BAS16P2T5G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16W-TP | Micro Commer... | -- | 204000 | DIODE GEN PURP 75V 100MA ... |
BAS1603WE6327HTSA1 | Infineon Tec... | 0.03 $ | 9000 | DIODE GEN PURP 80V 250MA ... |
BAS1602VH6327XTSA1 | Infineon Tec... | 0.03 $ | 18000 | DIODE GEN PURP 80V 200MA ... |
BAS16WS-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
BAS19 | ON Semicondu... | -- | 18000 | DIODE GEN PURP 120V 200MA... |
BAS116LT1G | ON Semicondu... | -- | 3000 | DIODE GEN PURP 75V 200MA ... |
BAS116LP3-7 | Diodes Incor... | -- | 70000 | DIODE GEN PURP 85V 215MA ... |
BAS19W-7-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 100V 200MA... |
BAS16H,115 | Nexperia USA... | 0.04 $ | 18000 | DIODE GEN PURP 100V 215MA... |
BAS16L,315 | Nexperia USA... | 0.04 $ | 120000 | DIODE GEN PURP 100V 215MA... |
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