BAS16HTW-13 Allicdata Electronics
Allicdata Part #:

BAS16HTW-13DITR-ND

Manufacturer Part#:

BAS16HTW-13

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ARRAY GP 100V 200MA SOT363
More Detail: Diode Array 3 Independent Standard 100V 200mA (DC)...
DataSheet: BAS16HTW-13 datasheetBAS16HTW-13 Datasheet/PDF
Quantity: 20000
10000 +: $ 0.03511
30000 +: $ 0.03304
50000 +: $ 0.03098
100000 +: $ 0.02747
Stock 20000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 3 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The BAS16HTW-13 is a silicon epitaxial planar diode, classified as a rectifier array. These diode arrays can be used in a variety of applications, from power supply rectification to low-current, low-voltage to high-current, high-voltage, and many other applications. BAS16HTW-13 has a wide voltage range and is suitable for both high- and low-voltage applications. It is a unidirectional device, meaning it can only rectify current in one direction, namely from anode to cathode. This diode array is constructed with two distinct subunits, an isolator subunit, and a diode subunit.

The isolator subunit is composed of an isolation barrier and a field-oxide layer, which serve to maintain the insulation between the two subunits. The two subunits are separated through an insulation thickness, which ensures a safe voltage level is maintained between the two subunits. The isolation barrier is also designed to ensure low leakage current, which helps to maintain a consistent performance when the device is in operation.

The diode subunit is composed of the rectifier diodes, which allow the current to flow from anode to cathode and enable current rectification. The diodes are constructed from a single p-type silicon surface, which serves as the anode/cathode junction. This diode layer also includes anode/cathode sharing of current, which helps to reduce noise. The anode/cathode sharing also helps to reduce losses during current conduction, further helping to maintain a consistent performance level. The construction of the diode subunit is designed to help maintain the proper temperature, allowing for better reliability and operation.

The working principle of the BAS16HTW-13 is quite simple; it uses the two subunits described above to enable current rectification. The isolator subunit acts as an insulator, ensuring that there is no leakage of current, and that proper insulation between the two subunits is maintained. The diode sub unit acts to enable the current to flow from anode to cathode. When an anode/cathode junction exists and current flows through it in one direction, the other direction is blocked, thus allowing the current to be rectified.

The BAS16HTW-13 is an ideal device for a wide range of applications involving power supply rectification and especially in low-current, low-voltage applications. The device offers excellent temperature and reliability, as well as high-current and high-voltage performance. Therefore, BAS16HTW-13 is a great choice for engineers who are looking for reliable, efficient, and high-performing diode arrays.

The specific data is subject to PDF, and the above content is for reference

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