Allicdata Part #: | BAS16HT3GOSTR-ND |
Manufacturer Part#: |
BAS16HT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 100V 200MA SOD323 |
More Detail: | Diode Standard 100V 200mA (DC) Surface Mount SOD-3... |
DataSheet: | BAS16HT3G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 6ns |
Current - Reverse Leakage @ Vr: | 1µA @ 75V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | BAS16H |
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Diodes - Rectifiers - Single has been widely used in multiple fields due to its excellent attributes. BAS16HT3G can be found in the diodes product category and it is one of the most popular tools in the product field. To understand the application field and working principle of BAS16HT3G, it is important to first look at its characteristics.
BAS16HT3G Diode is a silicon planar passivated high voltage rectifier. As it is a high voltage device, it is specially designed to suit power supply applications. The key feature of BAS16HT3G is its high blocking voltage capacity. The device can have a peak reverse voltage up to 1000V and a continuous reverse voltage rating up to 600V. In addition to this, BAS16HT3G also has an average forward current of 1.2A and an capacitance junction of typically 55pF at 1MHz.
The application fields of BAS16HT3G diodes include different types of power supply applications, motor control, electric vehicles, network applications, and high-performance embedded systems. It is also used for general purpose power rectification, for voltage rectification under high electrical noise conditions, and for other general purpose applications. The device also has a wide temperature range and a wide operating range, allowing it to be used in a myriad of different environments.
When it comes to the working principle of BAS16HT3G diode, the device is based on a process of forward conduction and reverse blocking. When a forward bias is applied, current flows through the diode. This is known as the forward conduction. The diode then blocks any voltage greater than the peak reverse voltage, thus protecting the device from any reverse breakdowns. On the other hand, when the forward bias is removed, the diode blocks any voltage greater than the peak reverse voltage, thus preventing any reverse breakdowns.
In brief, BAS16HT3G diode has a wide range of applications and a large blocking voltage capacity. The device is suitable for multiple types of power supplies applications and other general purpose applications. Moreover, the working principle of BAS16HT3G diodes is based on a process of forward conduction and reverse blocking. Therefore, BAS16HT3G diode is one of the most popular tools in the product field and is one the most reliable semiconductor devices.
The specific data is subject to PDF, and the above content is for reference
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BAS16WS-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
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