| Allicdata Part #: | BAS16LT1GOSTR-ND |
| Manufacturer Part#: |
BAS16LT1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE GEN PURP 75V 200MA SOT23-3 |
| More Detail: | Diode Standard 100V 200mA (DC) Surface Mount SOT-2... |
| DataSheet: | BAS16LT1G Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 200mA (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
| Speed: | Small Signal = |
| Reverse Recovery Time (trr): | 6ns |
| Current - Reverse Leakage @ Vr: | 1µA @ 100V |
| Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | BAS16 |
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Diodes are a type of electrical device with a wide range of applications in electronics. Single-rectifier diodes, such as the BAS16LT1G, are used to regulate the transfer of electrical current in many different types of applications. The BAS16LT1G is a single-rectifier diode designed to offer low reverse leakage current. It is useful in high-frequency switching applications, as well as in power supplies and electric vehicle applications.
Description
The BAS16LT1G is a low leakage single-rectifier diode with a maximum off-state voltage of 280V. It is designed to provide a low reverse leakage current of only 0.1µA at 25°C, making it ideal for high-frequency switching applications. It is also designed to provide good thermal stability, with a minimum thermal resistance of 4.2°C/W @ Tj = 25°C.
Working Principle
The BAS16LT1G is a single-rectifier diode that works by allowing electrical current to pass through it in one direction, while blocking it from passing in the other. This is known as rectification, and it is used in many different types of electrical applications. The BAS16LT1G has a low reverse leakage current of 0.1µA at 25°C, which means that it allows less current to flow in the reverse direction, making it highly efficient in high-frequency switching applications.
When the BAS16LT1G is used in high-frequency switching applications, it is designed to create a low resistance path between the positive and negative voltage supply. This allows current to flow through the diode in one direction while blocking current from passing through in the opposite direction. This ensures that the transfer of electrical current is regulated in the intended direction with minimal energy loss.
Applications
The BAS16LT1G is ideal for use in a variety of applications where minimal energy loss is desired. It is commonly used in power supplies and electric vehicle applications, where its low reverse leakage current and low thermal resistance allow for improved performance. The diode is also found in high-frequency switching applications, as its ability to block current from flowing in the reverse direction makes it ideal for regulating the flow of electrical current in various devices.
The BAS16LT1G can also be used in voltage clamping applications. In these applications, it is designed to allow current to flow through it until it reaches a certain voltage level and then to reduce the voltage level by blocking current from passing through it. This helps protect sensitive electrical components from excess voltage, as well as helping to regulate the voltage levels in a system.
Conclusion
The BAS16LT1G is an essential component for many applications that require the effective transfer of electrical current. Its ability to block current from flowing in the reverse direction makes it ideal for high-frequency switching applications, as well as for protecting sensitive components from excess voltage in voltage clamping applications. Additionally, its low reverse leakage current and low thermal resistance make it highly efficient and reliable in use.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| BAS16XV2T1G | ON Semicondu... | -- | 129000 | DIODE GEN PURP 75V 200MA ... |
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| BAS170WS-HE3-08 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 70V 70MA S... |
| BAS16WS-G3-18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
| BAS19-E3-18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 100V 200MA... |
| BAS19,215 | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 100V 200MA... |
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| BAS16SE6327BTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE ARRAY GP 80V 200MA ... |
| BAS16GWX | Nexperia USA... | -- | 1000 | DIODE GEN PURP 100V 215MA... |
| BAS16 RFG | Taiwan Semic... | 0.01 $ | 1000 | DIODE GEN PURP 75V 150MA ... |
| BAS116T-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 85V 215MA ... |
| BAS116E6327HTSA1 | Infineon Tec... | -- | 1000 | DIODE GEN PURP 80V 250MA ... |
| BAS16E6433HTMA1 | Infineon Tec... | 0.01 $ | 1000 | DIODE GEN PURP 80V 250MA ... |
| BAS16HTW-13 | Diodes Incor... | 0.04 $ | 20000 | DIODE ARRAY GP 100V 200MA... |
| BAS16-TP | Micro Commer... | -- | 15000 | DIODE GEN PURP 75V 300MA ... |
| BAS16WH6327XTSA1 | Infineon Tec... | 0.02 $ | 1000 | DIODE GEN PURP 80V 250MA ... |
| BAS116,215 | Nexperia USA... | 0.03 $ | 1000 | DIODE GEN PURP 75V 215MA ... |
| BAS19-TP | Micro Commer... | 0.02 $ | 1000 | DIODE GEN PURP 100V 200MA... |
| BAS16DXV6T5G | ON Semicondu... | 0.0 $ | 1000 | DIODE ARRAY GP 75V 200MA ... |
| BAS16-HE3-18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 75V 150MA ... |
| BAS16D-E3-08 | Vishay Semic... | -- | 12000 | DIODE GEN PURP 75V 250MA ... |
| BAS16VY/ZLF | Nexperia USA... | 0.0 $ | 1000 | DIODE ARRAY GEN PURP 100V... |
| BAS16WX-TP | Micro Commer... | -- | 9000 | DIODE GEN PURP 75V 100MA ... |
| BAS116LP3-7 | Diodes Incor... | -- | 70000 | DIODE GEN PURP 85V 215MA ... |
| BAS16VY,115 | Nexperia USA... | 0.05 $ | 1000 | DIODE ARRAY GP 100V 200MA... |
| BAS16P2T5G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
| BAS16-E3-08 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 75V 150MA ... |
| BAS19W-7 | Diodes Incor... | 0.06 $ | 1000 | DIODE GEN PURP 100V 200MA... |
| BAS16_L99Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 85V 200MA ... |
| BAS19-E3-08 | Vishay Semic... | 0.03 $ | 15000 | DIODE GEN PURP 100V 200MA... |
| BAS16WS-G3-08 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
| BAS1602WH6327XTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE GEN PURP 80V 200MA ... |
| BAS116LT3G | ON Semicondu... | 0.02 $ | 10000 | DIODE GEN PURP 75V 200MA ... |
| BAS16TW-TP | Micro Commer... | 0.06 $ | 1000 | DIODE ARRAY GP 75V 150MA ... |
| BAS16 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 85V 200MA ... |
| BAS19W RVG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 200MA... |
| BAS16VY/ZLZ | Nexperia USA... | 0.0 $ | 1000 | DIODE ARRAY GEN PURP 100V... |
| BAS16J,115 | Nexperia USA... | 0.02 $ | 282000 | DIODE GEN PURP 100V 250MA... |
| BAS16VV,115 | Nexperia USA... | 0.07 $ | 92000 | DIODE ARRAY GP 100V 200MA... |
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BAS16LT1G Datasheet/PDF