Allicdata Part #: | BAS321,135-ND |
Manufacturer Part#: |
BAS321,135 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE GEN PURP 200V 250MA SOD323 |
More Detail: | Diode Standard 200V 250mA (DC) Surface Mount SOD-3... |
DataSheet: | BAS321,135 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02834 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 250mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 200V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | BAS321 |
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Diodes are a type of electronic device that allow for the flow of electric current in one direction only. A single diode is known as a rectifier, and its general purpose is to convert AC power from alternating current to DC power from direct current. As such, rectifiers are used in various applications ranging from power conversion to signal processing. In this article, we will explore the application field and working principle of the BAS321,135 rectifier.The BAS321,135 is a typical 800V, 5A single-phase fast-recovery silicon diode, capable of high-efficiency power conversion. It offers high forward-current capability and fast-recovery time at up to 800V. Specifically, this diode has a reverse-recovery time of no more than 90ns and a forward-voltage drop of 1.0V at IF=5A. This makes it well-suited for applications such as switch-mode power supplies, inverters, and other power control systems that require high accuracy and low switching loss.In terms of operation, the BAS321,135 diode follows the traditional three-layer diode construction. This consists of an n-type layer of silicon, a p-type layer of silicon, and a second n-type layer. This configuration forms a region called the PN Junction, which creates a barrier that allows current to flow in one direction only -- from cathode to anode. When this barrier is overcome -- typically when forward voltage is applied to the diode -- the current will flow freely through the PN junction, allowing for the desired power conversion.The BAS321,135 rectifier also features a range of protective features, including ultra-fast recovery time and low reverse leakage current, both of which prevent over-current and thermal runaway. To further reduce the risk of failure and maximize the diode’s life, the BAS321,135 includes soft over-temperature protection, which automatically reduces current flow when the temperature of the device exceeds a certain limit.Finally, the BAS321,135 rectifier is compatible with a variety of integrated circuit (IC) packages, ranging from TO-92 and TO-124 varieties to TO-252 and TO-262 packages. This makes it ideal for integration into a wide range of applications, including automotive electronics and power-management products.In conclusion, the BAS321,135 single-phase diode is a reliable, fast-recovery rectifier ideal for long-term, high-efficiency power conversion. Its three-layer construction allows it to control bidirectional current, while its range of protective features help to maximize its life and reliability. Together, these components make the BAS321,135 diode a reliable and flexible choice for a wide range of applications and power-management systems.
The specific data is subject to PDF, and the above content is for reference
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