| Allicdata Part #: | 1727-4234-2-ND |
| Manufacturer Part#: |
BAS40,215 |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | DIODE SCHOTTKY 40V 120MA SOT23 |
| More Detail: | Diode Schottky 40V 120mA (DC) Surface Mount TO-236... |
| DataSheet: | BAS40,215 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.03180 |
| 6000 +: | $ 0.02765 |
| 15000 +: | $ 0.02351 |
| 30000 +: | $ 0.02212 |
| 75000 +: | $ 0.02074 |
| 150000 +: | $ 0.01843 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 40V |
| Current - Average Rectified (Io): | 120mA (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1V @ 40mA |
| Speed: | Small Signal = |
| Current - Reverse Leakage @ Vr: | 10µA @ 40V |
| Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | TO-236AB (SOT23) |
| Operating Temperature - Junction: | 150°C (Max) |
| Base Part Number: | BAS40 |
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The BAS40,215 application field and working principle are important in order to understand the usage of this diode. The diode is used mainly to prevent backflow of current in semiconductor materials and can serve as a non-explosive isolation point. As a rectifying diode, it prevents voltages from running too high while allowing current to flow in one direction only.
BAS40,215 is mainly used as a Si-base switch or voltage-controlled switch, i.e. it protects a circuit from voltage spikes or excessive heat. For this purpose the low on-state resistance and low forward recovery time make it a valuable component in the design of both stationary and mobile power supplies, switch mode power supplies, DC-DC converters, voltage regulators and any other applications where switching speed is important.
BAS40,215 working principal is based on the junction diode which allows current to flow in one direction but not the other. This is made possible by the semiconducting properties of the silicon material. The material has a layer of silicon atoms which when placed between two polarised layers of higher resistance, creates a junction with low resistance for forward current flow, but high resistance to reverse current.
BAS40,215 is constructed from two sets of PN-Junction, the "anode" and the "cathode". The anode receives current from the external source and the cathode transfers the current to the output. Due to the structure of the diode, it works in both directions: when forward biased, the anode has a lower potential than the cathode, and the current flow is called "forward-biased" due to the fact that the current moves in the same direction as the applied voltage.
When reverse biased, the current flow is reversed due to the potential difference between the anode and the cathode. This current flow is called "reverse-biased" because the current is forced in the opposite direction of the applied voltage. The BAS40,215 is designed to reject any backflows of current at a rated voltage of 40 volts and current of 215 milliamps. The forward voltage drop of 0.6 volts also prevents any current backflows in the reverse direction.
The BAS40,215 diode is also used for electrostatic discharge protection, where the reverse-biased diode acts as a clamping diode and so prevents leakage of current when there is a sudden surge of high voltage. Once the voltage passes the forward voltage barrier of the diode, it will be clamped and not prevented from reaching the sensitive circuit components nearby. This can help to protect sensitive electronics, such as microcontrollers, CPUs and computer memory.
BAS40,215 is a useful diode because of its versatility, reliability and affordability. Its low on-state resistance makes it ideal for many applications, not just power supplies and supplies. Its reverse bias ability makes it perfect for electrostatic discharge protection, while its low forward recovery time adds to its overall advantage in many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| BAS40-05-7-F | Diodes Incor... | -- | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS45A,133 | Nexperia USA... | 0.05 $ | 1000 | DIODE GEN PURP 125V 250MA... |
| BAS40-13-F | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 200MA ... |
| BAS40-04-G3-08 | Vishay Semic... | 0.05 $ | 3000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40-00-E3-08 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 40V 200MA ... |
| BAS4007WH6327XTSA1 | Infineon Tec... | 0.06 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40DW-05-TP | Micro Commer... | 0.1 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40DW-04-7-F | Diodes Incor... | -- | 6000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40-7-F | Diodes Incor... | -- | 129000 | DIODE SCHOTTKY 40V 200MA ... |
| BAS4006E6327HTSA1 | Infineon Tec... | 0.06 $ | 18000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS4006E6433HTMA1 | Infineon Tec... | 0.04 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40,235 | Nexperia USA... | 0.21 $ | 4363 | DIODE SCHOTTKY 40V 120MA ... |
| BAS4005WH6327XTSA1 | Infineon Tec... | 0.04 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40E6327HTSA1 | Infineon Tec... | 0.05 $ | 21000 | DIODE SCHOTTKY 40V 120MA ... |
| BAS40-05-HE3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40-06 RFG | Taiwan Semic... | 0.02 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40DW-06-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40H,115 | Nexperia USA... | 0.05 $ | 27000 | DIODE SCHOTTKY 40V 120MA ... |
| BAS40 RFG | Taiwan Semic... | 0.03 $ | 3000 | DIODE SCHOTTKY 40V 200MA ... |
| BAS4002LE6327XTMA1 | Infineon Tec... | 0.05 $ | 1000 | DIODE SCHOTTKY 40V 120MA ... |
| BAS40LP-7 | Diodes Incor... | -- | 126694 | DIODE SCHOTTKY 40V 200MA ... |
| BAS40W-06-7 | Diodes Incor... | 0.23 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40BRW-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40-05V,115 | Nexperia USA... | 0.06 $ | 12000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40W-05-7-F | Diodes Incor... | -- | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40DW-04-TP | Micro Commer... | 0.1 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS416F | Nexperia USA... | -- | 1000 | DIODE GEN PURP 75V 200MA ... |
| BAS40W-05-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS4004E6327HTSA1 | Infineon Tec... | -- | 15000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40-TP | Micro Commer... | 0.03 $ | 1000 | DIODE SCHOTTKY 40V 200MA ... |
| BAS4007E6327HTSA1 | Infineon Tec... | 0.06 $ | 15000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40-04-E3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40-05-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40BRW-7-F | Diodes Incor... | 0.1 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40,215 | Nexperia USA... | 0.04 $ | 1000 | DIODE SCHOTTKY 40V 120MA ... |
| BAS40V-7 | Diodes Incor... | -- | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40-04T-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40SL | ON Semicondu... | -- | 16000 | DIODE SCHOTTKY 40V 100MA ... |
| BAS40-04-HE3-08 | Vishay Semic... | -- | 9000 | DIODE ARRAY SCHOTTKY 40V ... |
| BAS40-06/ZLR | Nexperia USA... | 0.0 $ | 1000 | DIODE ARRAY SCHOTTKY 40V ... |
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BAS40,215 Datasheet/PDF