Allicdata Part #: | BAS40DW-06DITR-ND |
Manufacturer Part#: |
BAS40DW-06-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE ARRAY SCHOTTKY 40V SOT363 |
More Detail: | Diode Array 2 Pair Common Anode Schottky 40V 200mA... |
DataSheet: | BAS40DW-06-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Configuration: | 2 Pair Common Anode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io) (per Diode): | 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 40mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 5ns |
Current - Reverse Leakage @ Vr: | 200nA @ 30V |
Operating Temperature - Junction: | -55°C ~ 125°C |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | BAS40DW-06 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BAS40DW-06-7 is a small surface mount device in the Arrays category of diodes and rectifiers. It is an ultra low forward voltage drop Schottky Barrier Rectifier which is designed to be used in demanding applications such as automotive and consumer electronics. The device has a low forward voltage drop of 0.7 volts with a temperature coefficient twice lower than that of standard Schottky diodes making it ideal for consumer electronic applications.
The small surface mount package with a 0.8mm height is perfect for use in space constrained applications. The device features a maximum reverse leakage current of 2.5uA. It can be used in various applications such as in blowers, DC-DC converters and hot swappable battery charging systems.
The working principle of the BAS40DW-06-7 is based on the Schottky Barrier Rectifier effect. In this device a metal Semiconductor junction is formed and due to the formation of this junction, a small barrier potential is created. This barrier potential reduces the forward voltage drop when compared to other rectifier diodes. This is due to the fact that the barrier potential increases the carrier injection velocity and increases the transmission probability.
The metal semiconductor junction also creates a very small capacitance between the cathode and the anode which eliminates the need for external commutation capacitance which means that the device has a smaller reverse recovery time. This makes the device ideal for applications such as soft switching applications, dc-dc converters and high temperature consumer electronics.
Overall, the BAS40DW-06-7 is a useful device for applications such as automotive and consumer electronic applications due to its low forward voltage drop, small package size, capacitance-free operation and its ability to operate at high temperature. The device is designed to provide a rugged and reliable operation in demanding applications.
The specific data is subject to PDF, and the above content is for reference
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