Allicdata Part #: | BAS416Z-ND |
Manufacturer Part#: |
BAS416Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE GEN PURP 75V 200MA SOD323 |
More Detail: | Diode Standard 75V 200mA (DC) Surface Mount SOD-32... |
DataSheet: | BAS416Z Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75V |
Current - Average Rectified (Io): | 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5nA @ 75V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Operating Temperature - Junction: | 150°C (Max) |
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The BAS416Z is an advanced rectifier, made of a single PN junction. It is a vital component in the modern electronics industry, with a wide variety of industrial and commercial applications.
The single PN junction of the BAS416Z allows it to provide excellent performance in both high- and low-voltage rectification, with an overall efficiency of up to 90%. This efficiency greatly reduces power losses and increases the system’s overall efficiency. Furthermore, it also enables the device to operate with higher current values than traditional rectifier components.
The BAS416Z has a fast response time to changes in input voltage, allowing it to respond quickly to changing voltage levels. In addition, it is also capable of rectifying high-frequency signals, which can be used in applications such as communication systems and other high-speed electronic devices. Its low equivalent series resistance also enables it to operate with higher current values than standard rectifier components.
The BAS416Z is rated for an operating voltage range of up to 55V and a maximum current of 5A. Its construction allows for a maximum junction temperature of 150°C, making it suitable for high temperature industrial applications. Furthermore, its low voltage drop ensures that the device will operate at peak efficiency in many different applications.
The BAS416Z’s working principle is based on the avalanche breakdown phenomenon. When a certain voltage level is reached in the PN junction, the free electrons and holes that cross the junction gain sufficient energy to cause thermo-ionic emission, resulting in an avalanche breakdown. This event causes a large current to pass through the junction, allowing it to conduct high levels of current.
The BAS416Z is a reliable and efficient diode, ideal for many applications in industrial and commercial settings. It has a high level of tolerance to temperature fluctuations, and its low voltage drop ensures that it will always be operable at peak efficiency. Furthermore, its advanced construction makes it suitable for various applications, such as communication systems, high-speed electronic devices, and industrial applications. The BAS416Z is an excellent choice for many rectification applications.
The specific data is subject to PDF, and the above content is for reference
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