BAS70-04WF

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Diodes - Rectifiers - Single is a technology used for rectifying AC voltage or current into DC voltage or current. It is widely used in power conversion circuits such as AC-DC power supplies, photovoltaic systems and LED lighting. The BAS70-04WF which is a single diode rectifier device is designed for use in general rectification applications such as AC-DC power supplies, DC-DC converters, and rectification circuits.

The BAS70-04WF is a single diode packaged in a small SOT-23 package with a Forward Voltage (VF) at max 4V. It has a maximum Continuous Forward Current (I F) of 70mA and a maximum Reverse Voltage (VR) of 100V. It has a maximum Steady State Reverse Voltage of 50V. The device is made with a built-in safeguard by integrating two elements in its chip construction,a Schottky diode and a MOS barrier protection diode. The Schottky diode is a type of rectifier diode with a metallic semiconductor junction, allowing a much lower forward voltage drop compared to a standard rectifier diode. The MOS Barrier protection diode is a low Voltage Zener with a very low leakage current, providing an effective protection. As such, the BAS70-04WF device effectively helps to protect the load from overvoltage, overcurrent and reverse polarity.

The major application of the BAS70-04WF is in power supplies and LED lighting. In most power supplies, it is used as part of the bridge rectifier circuit. The BAS70-04WF device can be connected between the AC input and a DC load to convert the AC voltage into DC voltage. The device serves as an efficient line side protection, by limiting the current and providing an effectiveprotection from overvoltage, overcurrent and reverse polarity. In LED lighting, the BAS70-04WF is used for controlling the current flowing into the LEDs. The device acts as a current limiter, limiting the current flowing into the diode and hence controlling the current flowing into the LEDs. It is also used in various other rectification applications that require efficient line side protection.

The working principle of the BAS70-04WF is based on the fundamentals of the PN junction diode. A PN junction diode is formed by a junction between two semiconductor materials, one with a large number of free electrons (n-type semiconductor) and the other with a much smaller number of free electrons (p-type semiconductor). When the diode is forward biased,i.e, when the voltage of the anode is greater than that of the cathode, the electrons in the n-type semiconductor diffuse towards the p-type semiconductor while the holes in the p-type semiconductor diffuse towards the n-type semiconductor. This action leads to a current flowing across the diode and this is known as the forward biasing of the diode. On the other hand, when the diode is reverse biased,i.e, when the voltage of the cathode is greater than that of the anode, there is no significant current flow across the diode and this is known as the reverse biasing of the diode.

In the case of the BAS70-04WF, it has a Schottky diode and a MOS Barrier protection diode incorporated, thus enabling it to be used for rectification applications. Here, when the device is forward biased, the Schottky diode comes into play, allowing the current to flow through it, thus providing an efficient power conversion. On the other hand, when the device is reverse biased, the MOS Barrier protection diode acts as a protection, limiting the voltage across the device, and thus providing an effective protection from overvoltage, overcurrent and reverse polarity.

In conclusion, the BAS70-04WF is a single diode rectifier device with a Forward Voltage (VF) of max 4V, a Continuous Forward Current (IF) of max 70mA, and a maximun Reverse Voltage (VR) of 100V. It is designed for use in power conversion and rectification applications such as AC-DC power supplies, DC-DC converters, and LED lighting.The BAS70-04WF device is equipped with Schottky diode and MOS barrier protection diode which makes it an ideal choice for efficient line side protection.

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