BAS70-TP Allicdata Electronics

BAS70-TP Discrete Semiconductor Products

Allicdata Part #:

BAS70TPMSTR-ND

Manufacturer Part#:

BAS70-TP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE SCHOTTKY 70V 70MA SOT23
More Detail: Diode Schottky 70V 70mA (DC) Surface Mount SOT-23
DataSheet: BAS70-TP datasheetBAS70-TP Datasheet/PDF
Quantity: 216000
Stock 216000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 200nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Base Part Number: BAS70
Description

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The BAS70-TP is a diode in the single rectifier family. These rectifiers are generally used in numerous areas of electronics, including many fields of digital and circuit design such as linear voltage regulators and DC converters. The BAS70-TP diode specifically is a 150V-rated part that includes both its own junction temperature sensor and a thermal pad for improved thermal coupling. Additionally, the BAS70-TP can be used for power rectification and AC current sinking. Furthermore, utilizing the inherent positive temperature coefficient of the diode, temperature-compensated rectification is also possible.

One of the key advantages of the BAS70-TP is its low forward voltage drop. Its power dissipation rating makes it perfect for usage in applications with low power consumption. This in turn allows users to optimize space efficiency and decrease their overall power consumption.

The BAS70-TP also features low forward recovery time and low leakage current, meaning that users can reduce the number of diodes needed in their designs. In addition, the diode is designed with a low propagation delay, thereby increasing the overall switching speed of the design. Due to the BAS70-TP being a small package, it\'s suitable in applications that require a compact design.

The working principle of the BAS70-TP is relatively straightforward. The diode is composed of p-type and n-type semiconductor materials, with the N-type material occupying the lower region of the diode and the P-type material the upper region. When positive potential is applied to the N-type material, holes move from n-type to the p-type and the current flows. Conversely, when the potential is reversed, the electrons move from p-type to n-type, meaning current flow is not allowed.

The BAS70-TP is able to sustain reverse voltage of up to 150V, but only for a specified period of time. It is designed to be used only in isolated portions of circuits, where the reverse voltage remains limited. In order to ensure the current is safely kept to a minimum, the diode should be protected by an appropriate safety device such as a varistor or fuse.

Overall, the BAS70-TP diode is a highly versatile and high-quality diode suitable for many applications. Its low forward voltage drop, low leakage current, and low switching times make it particularly suitable for applications that require a low-power, low-cost option. Additionally, its temperature-sensing capabilities and thermal pad make it a great choice for systems where temperature management is important.

The specific data is subject to PDF, and the above content is for reference

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