BAS70-04,215 Allicdata Electronics

BAS70-04,215 Discrete Semiconductor Products

Allicdata Part #:

1727-2895-2-ND

Manufacturer Part#:

BAS70-04,215

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ARRAY SCHOTTKY 70V SOT23
More Detail: Diode Array 1 Pair Series Connection Schottky 70V ...
DataSheet: BAS70-04,215 datasheetBAS70-04,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03423
6000 +: $ 0.02977
15000 +: $ 0.02530
30000 +: $ 0.02381
75000 +: $ 0.02233
150000 +: $ 0.01985
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Series Connection
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =
Current - Reverse Leakage @ Vr: 10µA @ 70V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BAS70-04
Description

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Diodes - Rectifiers - Arrays is an important part of semiconductor technology. The BAS70-04,215 is a key power semiconductor device belonging to this category. It is compatible with numerous circuit applications, and is equipped with the revolutionary Shottky rectifier technology, providing better current carrying capability and higher efficiency for the application.

One main application of the BAS70-04,215 is power switching as it provides a much better power dissipation than that of conventional diodes. It is capable of switching power at up to 70 volts and is ideal for switching applications that require a fast response. The device is also suitable for applications that require low capacitance, such as signal lines or multiplexers. Additionally, this device can be used to produce voltage current regulators, eliminating thermal and electrical losses resulting from a phase control of an active power factor correction circuit.

The working principle of the BAS70-04,215 is fundamentally based on the Shottky rectifier theory. This device uses a combination of a heavily doped p-n junction and a metal-semiconductor barrier to create a low voltage drop across the junction. This is because the metal-semiconductor barrier prevents the majority carriers from crossing the junction. This mechanism has a much lower forward voltage drop than that of the junction diode and hence allows for higher efficiencies and better current carrying capability. The reverse current is also much lower compared to the junction diode and is ideal for power supply design.

The BAS70-04,215 is also capable of providing less conduction loss and is an ideal solution for power supplies in various industrial and automotive applications. The device can be used in hyper frequency switching applications, providing high efficiency and low power dissipation. The device also provides excellent reverse protection and switching performance. Additionally, the device is also suitable for surge protection as it has a much lower voltage drop on forward currents.

In conclusion, the BAS70-04,215 is an important power semiconductor device that has multiple applications. It is based on the Shottky rectifier device and has numerous advantages such as low voltage drop, low conduction loss and superior reverse protection. The device is ideal for a wide range of industrial and automotive applications, providing significantly better performance than that of conventional diodes.

The specific data is subject to PDF, and the above content is for reference

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