BBL4001

Vgs(th) (Max) @ Id:	2.6V @ 1mA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220-3 Fullpack/TO-220F-3SG
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	2W (Ta), 35W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6900pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	135nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	6.1 mOhm @ 37A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	74A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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BBL4001 Application Field and Working PrincipleThe BBL4001 is a single- and dual-gate, field-effect transistor (FET) that operates as an on/off switch in devices requiring high-speed operating capability. This type of transistor is used in applications related to computers, industrial automation, medical systems, communication and electronics.The BBL4001 is a versatility device. It can be used in a variety of configurations ranging from single stage amplifiers and mixers to multi-stage amplifiers and filters. Some of the applications for which this device is suitable include radio frequency (RF) amplifier and modulator, receiver front end and mixer, transducer control, temperature modulation, noise cancellation and stability control.The transistor is available with either an N-channel or a P-channel and is capable of operating at speeds ranging from 200 kHz to 10 GHz. Each of these FET types is designed to switch a part of the circuit on or off in response to an input signal. The gate voltage controls the current gain or attenuation of the circuit.The BBL4001 works by the voltage applied to its gates controlling the conductivity of the channel between the drain and source. An increase in gate voltage causes the channel to be more conducting, effectively turning on the FET. A decrease in gate voltage causes the channel to become less conductive, effectively turning off the FET.The advantage of using the BBL4001 as opposed to a other types of transistors is its superior biasing stability, high speed and low power consumption. By taking advantage of the FET’s inherent biasing stability, the BBL4001 is capable of operating at higher performance levels compared to traditional transistor types.The BBL4001 is also capable of providing superior frequency response. Its bandwidth can be varied by varying the voltage applied across the drain and source. This means that the same bias applied to the device will result in different frequency responses depending on the gate voltage applied.Finally, the BBL4001 also offers superior noise cancellation characteristics. This is due to its low output impedance. When used in applications where noise cancellation is important, the BBL4001’s low output impedance can help reduce or eliminate unwanted noise.All in all, the BBL4001 is a versatile and reliable device that is suitable for a wide range of applications. It offers superior biasing stability, high speed operation and low power consumption. Its frequency response can be varied by varying the voltage applied to its gates. Finally, its low output impedance results in superior noise cancellation characteristics.

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