BC182_J35Z

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 2mA, 5V
Power - Max:	350mW
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	BC182

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Introduction

BC182_J35Z is a bipolar (BJT) silicon transistor specially designed for use in low-noise amplifier applications. It is used in many modern electronic devices, including but not limited to audio amplifiers, radio receivers and transmitters, power supplies, and television sets. This transistor is designed to provide low noise performance and low distortion. It is also commonly used for low-noise switching applications.

Characteristics

The BC182_J35Z is designed to be reliable, dependable, and to provide consistent performance across a wide range of operating conditions. It has a high breakdown voltage of 275 volts, a low collector-to-base leakage current of 10 microamperes, and a low power dissipation of 6 watts. It has a high frequency response with a maximum operating frequency of 300KHz.

Applications

The BC182_J35Z is primarily used in low-noise amplifier applications. It is frequently used in audio applications such as preamplifiers, tone control circuits, and mixers. It is also used in radio receivers and transmitters, power supplies, and television sets. It is an ideal choice for signal conditioning and amplification applications with low noise and low distortion requirements.

Working Principle

The BC182_J35Z is a bipolar junction transistor (BJT). It consists of two p-type and one n-type semiconductor layers. The two p-type layers are connected to each other by a thin silicon layer. The n-type layer is connected to the base. When a voltage is applied to the base, it creates a current that flows between the collector and the emitter. This current helps control the current flow between the collector and the emitter, thus controlling the overall current flow from the collector to the emitter. The current from the collector to the emitter is determined by the current through the base-emitter junction. The amount of current flowing from the collector to the emitter is proportional to the base current. Therefore, by controlling the base current, the BC182_J35Z can be used to control the current flowing from the collector to the emitter. This makes it ideal for applications such as amplifiers and switching applications.

Conclusion

The BC182_J35Z is a reliable and dependable bipolar (BJT) silicon transistor specially designed for low-noise amplifier and switching applications. It has a wide range of useful characteristics and is ideal for audio, radio, power supply and television applications. It has a high breakdown voltage, a low collector-to-base leakage current, and a low power dissipation. By controlling the base current, it can be used to control the current flowing from the collector to the emitter.

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