BC182LB_D27Z Allicdata Electronics
Allicdata Part #:

BC182LB_D27Z-ND

Manufacturer Part#:

BC182LB_D27Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 350m...
DataSheet: BC182LB_D27Z datasheetBC182LB_D27Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Power - Max: 350mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC182
Description

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BC182LB_D27Z is a type of single bipolar junction transistors (BJT). It is a member of the BC182 family of transistors, with some of the other variants being BC182L, BC182LA and BC182LAR. It is mainly used in consumer electronic applications and is available in both through-hole package and surface mount package forms. The maximum collector-base voltage rating of the transistor is 45 Volts and its maximum collector current rating is 0.025 Amperes.

This type of bipolar transistor is composed of two PN junctions which are arranged in a common base configuration. The base is formed by connecting the collector to the emitter and the two junctions are formed by connecting the emitter to the base and the collector, respectively. The base region is lightly doped which restricts the flow of majority carriers between the collector and the emitter, hence, forming a voltage gain amplifier.

The working principle of the device is straightforward. A small amount of current passes between the emitter and the base, and this current is amplified to generate larger current gain at the collector. As this is a single stage device, the current gain is generally around 80, which is achieved by connecting the emitter and the collector to the base.The amplitude of this current gain varies with the variation of collector-emitter voltage.

The device is mainly used in consumer electronic applications such as in car stereo amplifiers, pulse modulators, power line filter banks and oscillators. The main equipment that the device is used in includes audio amplifiers, switching circuits, storage devices and various communication systems. The performance of the BC182LB_D27Z is further enhanced by its ability to withstand relatively high temperatures. It is possible to use the device with a maximum junction temperature of 120°C, which makes it ideal for use in environments with high temperatures.

In addition, the BC182LB_D27Z is also suitable for use in wide range of applications due to its fast switching time, which makes it suitable for faster operations. The device can also be used in high frequency applications, due to its good gain-bandwidth characteristics.

In conclusion, the BC182LB_D27Z is a single stage BJT transistor that can be used in a wide range of consumer electronics applications. The device provides good gain-bandwidth, easy to use characteristics and reliability in a wide temperature range. It offers an effective solution for audio amplifiers, switching circuits, storage devices and various communication systems.

The specific data is subject to PDF, and the above content is for reference

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