BC183_J35Z Allicdata Electronics
Allicdata Part #:

BC183_J35Z-ND

Manufacturer Part#:

BC183_J35Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.1A TO-9
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 150MHz 350m...
DataSheet: BC183_J35Z datasheetBC183_J35Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Power - Max: 350mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC183
Description

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The BC183_J35Z Transistor is a single, bipolar (BJT) transistor used in the sensing and switching of electronic and digital devices. It is an inexpensive alternative to field-effect transistors (FETs) and is commonly used in applications requiring an analog or digital signal to be sensed or converted.

The BC183_J35Z is a single-junction, NPN type bipolar junction transistor (BJT). A BJT is formed when two N-type and one P-type semiconductor layers are deposited on top of each other, forming a three-layer sandwich structure. The layers are called the base, the emitter and the collector. The transistor is configured in such a way that when current is applied through the base layer, it is absorbed by the collector and emits electrons from the emitter, creating a current flow from the collector to the emitter. This process is called "forward-biasing", since the bias is forward, while current going the other way is not possible, since the three layers act as a "diode" in this direction.

The BC183_J35Z also has an Enhanced Transistor Outline (ETO) that makes it physically and electrically compatible with other BJTs. This allows it to be used in OEM applications or other projects that require interchangeability and modular design. The BC183_J35Z also offers excellent gain, enables reduced-noise operations relative to traditional transistors, and has excellent reverse-current protection.

The main applications of the BC183_J35Z include sensing and switching, amplifier stages, power transistors, and operational amplifiers. As a sensing device it can be used to convert low level analog signals into digital signals for automatic control systems. It can also be used in switch-mode power supplies, motor controllers, and general purpose switching. It can be used in amplifier stages to amplify small signals to drive larger loads such as loudspeakers. It can also be used in power transistors and operational amplifiers to provide high power gain and high speed response.

When using the BC183_J35Z there are few things to keep in mind. It may not handle large current and voltage levels which may require an extra device in order to do so. As is the case with all transistors, it must be properly biased to ensure that the application works as expected. Finally, it is important to make sure that static charges are dissipated, as these can cause damage to the transistor.

The BC183_J35Z is an inexpensive, single-junction, NPN type bipolar junction transistor (BJT). It is used in a variety of applications, including sensing and switching, amplifier stages, power transistors and operational amplifiers. It can provide excellent gain and reduced-noise operation, as well as excellent reverse-current protection. Care should be taken when using the BC183_J35Z to ensure that static charges are dissipated, that it is properly biased and shielded, and that it is not subjected to currents or voltages beyond its rated limit.

The specific data is subject to PDF, and the above content is for reference

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