BC182B_J35Z

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BC182B_J35Z is a single bipolar transistor (BJT) designed and manufactured by ON Semiconductor, a global leader in designing and producing high-performance semiconductor components and technologies. The device is a multi-pin device consisting of an NPN base, collector and emitter. This device is characterized by a maximum DC collector current of 200 mA and an 1.0 watt power dissipation. It has a collector-emitter voltage (Vce) rating of 45 volts and a collector-base voltage (Vcb) rating of 60 volts. The maximum transition frequency (ft) rating is 100 MHz.

The BC182B_J35Z is ideal for use in low-frequency amplifier applications, such as audio preamps, low-amplifier, low-noise and low-distortion circuits. The device is also suitable for use in regulated power supplies, such as linearpower converters and DC-DC convertors. The BC182B_J35Z is also used in switching circuits, timing circuits, and interfacing with logic circuitry.

This device is also used in analog circuits such as active filters, oscillators, AF amplifiers and sampling circuits. The BC182B_J35Z is also suitable for use in low-level signal applications and low-power circuit design. The device can also be used in high-speed digital applications, such as data acquisition, signal processing and high-speed logic interfaces.

The BC182B_J35Z\'s working principle involves the NPN transistor biasing its collector with a voltage (VCC) applied to the base and collector, creating a current between the collector and base terminals that is controlled by the base voltage. This current creates a voltage drop across the collector-emitter terminals when the base is driven by a high-level signal or current. This voltage drop creates a change in the transistor\'s output in proportion to the base current as a result of which the base-emitter voltage (VBE) changes. This change in the transistor\'s output voltage is the transistor\'s primary function.

The BC182B_J35Z can be used in both switching and linear amplification applications. In a switching application, small base currents are needed to switch relatively high collector currents. The large collector current of this device enables it to switch relatively large amounts of current on and off quickly and with minimal power dissipation. In linear applications, small changes in the base-emitter voltage cause large changes in the collector current.

In any application, proper device biasing is important for reliable and predictable operation. The BC182B_J35Z requires an emitter-bias voltage to keep it in either cut-off or saturated states. This voltage should be adjusted to the correct level to prevent over-saturation or threshold degradation. An insufficient emitter bias voltage will prevent the device from handling large amounts of signal and switching power. Conversely, an excessive bias voltage may damage the device over time.

In summary, the BC182B_J35Z is a bipolar transistor designed for low-noise, low-power, robust applications such as audio preamps, switching circuits, timing circuits, and logic interfaces. The device can easily handle large amounts of power through its large collector current, making it ideal for use in high-speed digital applications. Proper biasing and thermal management of the device will ensure its reliable and predictable operation over time.

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