BC307_J35Z Allicdata Electronics
Allicdata Part #:

BC307_J35Z-ND

Manufacturer Part#:

BC307_J35Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 45V 100mA 130MHz 500m...
DataSheet: BC307_J35Z datasheetBC307_J35Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC307
Description

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BC307_J35Z is a type of NPN Transistor, a single BJT. It is a low power, general- and low-level switching transistor. It can be used for a variety of digital, analog, and power-related applications.

It has a maximum collector-emitter voltage of 40V, a maximum collector-base voltage of 60V and a maximum emitter-base voltage of 5V. Its current gain can range between 100 and 500, depending on the collector current. As for the power dissipation, it can range from 500mW to 1.5W.

With its low-power characteristics, it is an excellent choice for designs that require low power, high gain applications. It has a moderate gain and can be used in fast-switching circuits. It is also cost-effective and requires only a small heatsink, making it a great choice for applications where size and cost is a factor.

BC307_J35Z has a wide range of application scenarios, from switching to digital and analog devices. It can be used in relays, analog multiplexers, gates, amplifiers, and as a switch in various applications.

The working principle of the BC307_J35Z is based on a BJT. A BJT is a four-layer semiconductor consisting of a base, collector, and emitter. The base is composed of P-type semiconductor material, while the collector and emitter are N-type. When a voltage is applied to the base, electrons in the N-type materials move to the P-type material and create a majority of holes there, which allows current to flow from the collector to the emitter and form an electric circuit.

The current gain of the transistor is affected by the amount of current that flows through the base. When the current passes through the base, it causes a voltage drop across the collector-emitter junction, resulting in power loss. This power loss is referred to as the "transistor dissipation".

The working frequency of BC307_J35Z can range from DC up to 200KHz. Its small signal and high power transfer characteristics make it an ideal choice for a variety of signal processing, amplification, and switching applications.

In conclusion, BC307_J35Z is a single BJT transistor with a wide range of applications. From digital, analog to switching circuits, it offers excellent performance for most applications. It is cost-effective, has low power consumption, and is suitable for a variety of high-frequency applications. With its wide range of features, it is suitable for many different types of circuit designs.

The specific data is subject to PDF, and the above content is for reference

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