BC308ATF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Bipolar Junction Transistors (BJTs) are common electronic components used in a variety of electronic systems. One type of BJT is a BC308ATF, which is a single-stage NPN transistor junction. This type of transistor has a variety of uses across many different applications, with its working principle based on the movement of charge carriers.

The BC308ATF is a NPN transistor, meaning that its emitter, base, and collector are allocated in the following way. The emitter is the positively charged terminal, the base is the middle terminal, and the collector is the negatively charged terminal. It is also a single-stage BJT, which means that the BC308ATF contains just one junction while other BJTs may contain more junctions.

The BC308ATF is designed for use in applications requiring current amplification, such as amplifiers in radio systems and audio systems, switch circuits, and voltage regulators. When used in these applications, current is fed into the BC308ATF’s base terminal. This current causes the movement of charge carriers from the emitter to the collector. This movement of charge carriers creates a current gain in the transistor, which is the multiplicative factor that determines the amount of current present at the collector when compared to the current at the emitter.

The BC308ATF has a maximum power dissipation rate of 500 milliwatts (mW). This dissipation rate determines how much power can be dissipated from the transistor before damaging it. The BC308ATF can also carry a maximum collector-emitter voltage of 25 volts (V). A voltage exceeding 25 V can also damage the transistor.

The BC308ATF has a typical current gain of 90, which is the multiplicative factor that determines the amount of current present at the collector when a certain amount of current is fed into the base. This current gain can vary from transistor to transistor, but a typical gain of 90 is used as a general guide when considering the BC308ATF.

The BC308ATF has a junction capacitance of 130 picofarads (pF). Junction capacitance is the amount of electrical charge stored on the semiconductive material in the transistor, typically at the base-emitter junction, when a voltage is applied to the transistor’s terminals. This capacitance value is used to calculate the frequency of signals that the transistor can adequately handle.

In order to use the BC308ATF effectively, it is important to consider the components that it should be paired with. It is commonly used with resistors and capacitors, to ensure efficient signal movement and amplification. The resistors provide a constant amount of electrical resistance to the signals travelling through the circuit, and the capacitors provide an electrical ‘buffer’ that is used to store electrical charge.

The BC308ATF is versatile and effective transistor, designed for a variety of applications requiring current amplification. Its working principle is based on the movement of charge carriers between the base, emitter, and collector, and current gain can be calculated using the transistor’s typical current gain value of 90. Its junction capacitance is also important to consider, as it will determine the signal frequency that the transistor can handle, and it should be paired with resistors and capacitors to ensure efficient signal movement and amplification.

The specific data is subject to PDF, and the above content is for reference