BC307BTF

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The BC307BTF is a single bipolar transistor that finds various applications. It has an optimal reliability and power consumption. Designed for general purpose amplification and switching applications, the BC307BTF provides good frequency and gain performance in various applications.

BC307BTF has a high current gain (hFE) of 400±150 and a collector-emitter saturation voltage (VCE(sat)) of 0.2V @ IC/IB = 10/0.6A. The DC current gain ranges from 40 to 400 and the DC current gain (hFE) is between 40 and 700. The maximum DC current rating is 0.35A (continuous), and the maximum collector power dissipation is 900mW.

The BC307BTF is a NPN transistor type that typically uses a 12V power supply. It is used in consumer electronics, automotive, computer and data transmission, instrumentation, and other industrial applications. The BC307BTF is designed to be used in applications that require high bandwidth, high speed switching, and fast switching times. The transistor combines low power consumption and low noise with good gain and high speed.

BC307BTF provides various features like high breakdown voltage, low thermal resistance and resistor saturation voltage. It is suitable for logic-level I/O applications, highspeed switching, amplifier circuits and high frequency drivers. The device is also suitable for circuits with inductive loads, circuit protection applications and high frequency power converters.

The DC transfer characteristics of the BC307BTF are excellent, and it provides excellent switching characteristics. The maximum DC current gain of the device is 40-700, and the maximum collector-emitter voltage rating is 45V. The base-emitter voltage (VBE) is between 1.35V and 5.5V. The maximum current leakage of the Collector-Emitter terminal is 0.03mA.

The working principle of BC307BTF is that it allows current to flow when the base is at a higher potential than the emitter. By regulating the voltage at the base, the collector current can be controlled. The current gain of the BC307BTF is determined by the impedance at the base-emitter junction. When a signal is applied to the base, the voltage drops across the collector-emitter junction. The current flowing through the collector-emitter junction is dependent on the base-emitter impedance and the collector-emitter voltage. Thus, the gain of the BC307BTF is determined by the impedance of the base-emitter junction and the collector-emitter voltage.

In conclusion, the BC307BTF is a single-bipolar transistor that is designed for general purpose amplification and switching applications. It is used in a wide range of applications including consumer electronics, automotive, instrumentation, computer and data transmission, and others. It has a high current gain of 400±150, a collector-emitter saturation voltage of 0.2V @ IC/IB = 10/0.6A, and a maximum collector power dissipation of 900mW. The working principle of the BC307BTF is that it allows current to flow when the base is at a higher potential than the emitter, and its current gain is determined by the impedance at the base-emitter junction.

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