BC308CBU

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	380 @ 2mA, 5V
Power - Max:	500mW
Frequency - Transition:	130MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	BC308

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BC308CBU Transistors are a type of a bipolar junction transistor, commonly referred to as BJTs, which uses an emitter, a collector and a base in order to amplify electronic signals. BC308CBU transistors are in the single category, meaning that every transistor is discretely packaged without any other components in order to create an amplifier or other related circuit. Generally, transistors can be further classified according to their uses and structured in three categories: Switching, Amplifying and Current Switching.BC308CBU transistors have various usage fields. Generally, they are used for linear amplifying, signal mixing, signal switching, signal limiting and quick switch current control. More specifically, within these fields, BC308CBU transistors can be used for frequency regulating and signal modulation, signal amplifying and controlling, circuit switch, power amplifier equipment and voltage amplifier, frequency amplification and oscillation, high frequency power amplifier and switched current.The working principle of BC308CBU transistors is quite simple, yet important, as it allows all these mentioned usage fields. By definition, a BJT is based on three p-n junctions, two at the base, sourcing a connection between the emitter and collector, and one at the emitter. These three p-n junctions are arranged in such way that it allows the transistor to conduct in a very specific manner depending on the voltage applied to either the base, the emitter or the collector. Therefore, the BJT\'s figure of merit is the related muscle protein called Base-Collector voltage, or the VBE. VBE is basically the voltage supplied from one of the diodes to the other, allowing the current to flow in the circuit.More specifically, when a base-emitter voltage of more than 0.7V is applied, the transistors start to conduct, allowing a current to flow form the emitter to the collector. This current is then used to regulate a higher voltage across the base and collector of the transistor, which is used in order to create a higher current flow across the circuit. The figure of merit of BC308CBU transistors is the DC current gain, commonly referred to as the hFE rating, which represents the ratio of the input current to the output current of the transistor.Finally, BC308CBU transistors are mainly characterized for the following operating parameters:

• Operating voltage: 0.5V to 2V
• DC current gain: 25 to 300
• Operating temperature range: -55°C to 150°C
• Max collector current: 0.75A
• Storage temperature range: -65°C to +200°C
• Max collector-emitter voltage: -2V

Generally, BC308CBU transistors are very efficient, highly reliable and easy to integrate in any circuit, even if they are designed to operate at high power levels. Thanks to their distinct parameters, they are suitable for a wide variety of applications and can be used both in commercial and industrial settings.

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