BC546-AP Allicdata Electronics
Allicdata Part #:

BC546-APMSTB-ND

Manufacturer Part#:

BC546-AP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS NPN 65V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 65V 100mA 300MHz 625m...
DataSheet: BC546-AP datasheetBC546-AP Datasheet/PDF
Quantity: 1000
20000 +: $ 0.04075
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92
Base Part Number: BC54*
Description

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BC546-AP Transistor -Bipolar (BJT) - Single

BC546-AP is one of the most common single transistor devices on the market. It is part of the BC546 family from NXP. This transistor device is mainly used in stages where low noise, high power, and low power consumption are desired. The BC546-AP requires a very low voltage to activate and therefore is an ideal device to be used in portable and battery-powered applications.

Application Field

BC546-AP transistor devices are used in variety of applications including portable electronics, automotive and it is widely used in low-noise pre-amplifiers. It is well-suited for use in the amplification of small-signal applications and in triggering circuits. Additionally, it is used in the audio industry for amplifying stages, oscillator circuits, and in some radio communication systems. It also finds application in low-frequency amplifier designs, low-noise amplifiers, and data converters.

Working Principle

BC546-AP devices are based on bipolar junction transistor (BJT) technology. It is a three-terminal device consisting of a base, collector and emitter. To power the device, a small electrical current is sent through the base and this activates the current flow between the collector and the emitter. It is a unipolar device meaning that only current flows in one direction and it does not denote the use of getters. The collector and emitter are connected in parallel and both are connected to the base. When power is applied to the base, current flows from the collector to the emitter. This current is called collector current and it enables the transistor to amplify voltage and current. Moreover, the base-emitter junction can be used to control the base-emitter voltage and therefore the current flow.

The current amplification factor of the device is denoted as hfe. It is usually specified in the manufacturer\'s data sheet. This parameter is affected by the physical characteristics of the device such as the width and length of the base region, the doping of the emitter and collector regions, and the base-emitter junction temperature. This parameter of the transistor is critical in determining the performance of the device and therefore the application it is used in.

The BC546-AP can be used in applications where switching speed is important. The switching speed of the device is typically high, allowing the device to stay in the high state for a longer period of time. This enables the transistor device to be utilized in high speed switching applications.

In conclusion, the BC546-AP is a unipolar NPN transistor device that is widely used for small-signal amplification in applications where high speed and low noise is desired. It can be used in various low-noise pre-amplifiers, data converter circuits, and in triggering applications. Its current amplification factor is denoted by hfe and it is affected by the device\'s physical characteristics and its temperature.

The specific data is subject to PDF, and the above content is for reference

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