BC547B A1G Allicdata Electronics
Allicdata Part #:

BC547BA1G-ND

Manufacturer Part#:

BC547B A1G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TRANSISTOR, NPN, 45V, 0.1A, 200A
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 500mW Thro...
DataSheet: BC547B A1G datasheetBC547B A1G Datasheet/PDF
Quantity: 1000
4000 +: $ 0.01518
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92
Description

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BC547B A1G, a type of PNP bipolar junction transistor (BJT), is mostly used as an amplifier or switch. It features a gain of approximately 110-800 (from Ic = 2mA to Ic = 50mA). The transistor also has an excellent voltage holding capacity of 45V-300V, which implies that it may prove to be versatile in providing various outputs for different applications. The BC547B A1G is three-terminal device, consisting of three lead terminals; Emitter(E), Base (B), and Collector (C). An electric current flows in through the Base terminal and travels between two types of semiconductor materials connected with its glass sealed envelope, i.e. the P-type and N-type. This connection between P-type and N-type results in the formation of a PNP junction. This junction is what is referred to as the Base-Emitter region.

The working principle of BC547B A1G transistor can be explained by the following illustration: when a voltage is applied to the Base terminal of the transistor, it will form an electric field in the region between the Base and Emitter, which is the PNP semiconductor junction between the two types of materials. This electric field will cause the electrons to move, allowing current to flow. This current flow is known as the base current, and its intensity depends on the voltage applied to the Base terminal. The higher the voltage, the higher the electron flow, thus the higher the base current.

As the Emitter Reverse Bias Voltage (ERVB) increases, the collector-emitter current will decrease, thus decreasing the collector current. This means that the BC547B A1G is an ideal amplifier device as its gain may be controlled by the voltage applied to the Base terminal and the ERVB. The transistor also exhibits excellent switching capabilities and can be used to provide on/off control for various purposes. It is also suitable for designing audio frequency amplifiers, signal switching circuits, and other small circuits that require amplification. It is recommended for use in the fields of communication, automotive, industrial, medical, and military applications.

In conclusion, the BC547B A1G is a versatile device suitable for a wide range of applications. It can be used as an amplifier or switch, providing excellent voltage holding capacity and gain control. It features good switching capability and excellent thermal stability, making it the ideal choice for both small and large-scale applications. As such, the BC547B A1G is a dependable device that can be used to provide reliable performance and results.

The specific data is subject to PDF, and the above content is for reference

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