BC546BZL1G Allicdata Electronics
Allicdata Part #:

BC546BZL1GOSTB-ND

Manufacturer Part#:

BC546BZL1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 65V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 65V 100mA 300MHz 625m...
DataSheet: BC546BZL1G datasheetBC546BZL1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC546
Description

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BC546BZL1G is a type of single bipolar junction transistor (BJT) in a plastic surface mount package produced by Motorola, Inc. The device is intended for general purpose amplification and switching. It is rated to handle currents up to 100 mA and can transition between cutoff and saturation modes. It is widely used in commercial and industrial applications.

Characteristics and Features of BC546BZL1G

BC546BZL1G transistors are designed with a variety of features to provide superior performance. It has an elementary current gain of β= 160, a collector-to-emitter breakdown voltage of 60 volts, and a maximum DC collector current of 100 mA. Its total power dissipation ratings are 625 mW, and it can tolerate powers up to 625 mW for short periods.

Applications of BC546BZL1G

The BC546BZL1G transistors are used in various electronic circuits and applications, such as motor control circuits, power supplies, bridge circuits, high-frequency amplifiers, and high-voltage drivers. It is also widely used in switching and level-shifting circuits. The device is widely used in automotive and industrial electronics, as it can withstand temperatures up to 125°C.

Working Principle of BC546BZL1G

The working principle of BC546BZL1G is based on the PN junction. It is composed of three layers: two semiconductor regions, and a control region, usually formed by the two base terminals. The base receives a small amount of current, which controls the current flow between the emitter and collector. This process is known as “bipolar current amplification”, and it is the main operating principle of all BJT transistors.

When a voltage is applied to the base, electrons are attracted to the emitter, which then flow to the collector. This creates a current flow that can be controlled by adjusting the base voltage. The current gain, β, is the ratio of collector current to the base current. This property is used to amplify a signal.

The BC546BZL1G is known to have excellent reliability and stability in various conditions. It is protected from damage by thermal overloads, and provides a highly stable operating temperature with a maximum working range of 175°C. The device has a high current lab testing of 600 mA, and is resistant to stress from environmental contaminants such as dust, moisture, and solvents.

Conclusion

BC546BZL1G is a type of single bipolar junction transistor with excellent characteristics and features, providing superior performance for a wide range of applications. It is suitable for general purpose amplification and switching, and is widely used in automotive and industrial electronics. Its working principle is based on the PN junction, and its current gain ratio, β, is the ratio of collector current to the base current, providing amplification of a signal.

The specific data is subject to PDF, and the above content is for reference

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