BC548B B1G Allicdata Electronics
Allicdata Part #:

BC548BB1G-ND

Manufacturer Part#:

BC548B B1G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TRANSISTOR, NPN, 30V, 0.1A, 200A
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 500mW Thro...
DataSheet: BC548B B1G datasheetBC548B B1G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.02006
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
Description

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The BC548B B1G is a commonly used NPN silicon transistor that commonly operates in the 500 miximum collector current (IC) range. It is mostly used in many low-power applications such as small signal amplification and low-speed switching circuits.

The BC548B B1G features a low noise level, lower base-emitter saturation voltage (VBEsat), and lower leakage current than similar transistors. It has a maximum power dissipation of 500mW and a voltage range of up to 60V.

Application

The BC548B B1G is a universal low power device that is used in a wide range of electronic applications including:

  • Audio amplifiers
  • Radio frequency amplifiers
  • Competition amplifiers
  • Small signal amplifiers
  • Switching circuits
  • Control circuits

It is also commonly used in many consumer electronics such as radios, CD players and televisions.

Working Principle

The BC548B B1G device operates using the principles of a bipolar junction transistor (BJT). A BJT acts like two diodes connected back-to-back and is used to amplify electric signals.

The BC548B B1G has an emitter, collector and base. An electrical signal is applied to the base which opens a current path between the emitter and collector contacts.

The voltage of the collector side is greater than the base side, which results in a higher current flowing through the collector-emitter path. This current is then increased proportionally depending on the base current.

The BC548B B1G is also equipped with a reverse breakdown voltage (BVcb) which ensures that the transistor does not break down if the voltage at the collector-base junction is increased.

Advantages

The BC548B B1G offers a number of advantages over other transistors, including:

  • It is a very small and light-weight device.
  • It has low noise level and low leakage current.
  • It has a wide operating voltage range up to 60V.
  • It is a low-cost and reliable device.

The BC548B B1G is a versatile and reliable device that can be used in many different electronic applications. It is a high-performance, low-power device that offers excellent performance and long-term reliability.

The specific data is subject to PDF, and the above content is for reference

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