BC549C Allicdata Electronics
Allicdata Part #:

BC549COS-ND

Manufacturer Part#:

BC549C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 250MHz 625m...
DataSheet: BC549C datasheetBC549C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC549
Description

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BC549 C is a high frequency, high gain NPN transistor used in wireless industry. It is a three-terminal device used to control the current or voltage amplification and switching in radio transceivers. It is manufactured in a convenient three-lead SOT-23 package. This bipolar transistor is a versatile device that can be used in low-level signal handling applications. It is specifically designed for use in cellular radios, microwave amplifiers, antenna switching systems and other applications where small size and low noise are key requirements. It can be used for low power amplifier circuits, as well as for power switching purposes. Since it is a high frequency device, it is also suitable for RF circuits. It has been designed to get a good performance at high frequencies, so it can be used for initial stages of RF amplifiers operating in the HF to VHF frequency range.BC549 C is a PNP transistor, meaning the collector and the emitter are connected to the same DC voltage. As such, it is classified as a single transistor. Its maximum collector current is rated at 800 mA, while the base current is limited to 5mA. The current gain is also quite high, being between 70 and 500. This device\'s operating temperature range is between -55oC and +150oC and its maximum power dissipation is rated at 625mW. The transistor can also withstand a high collector-emitter voltage of 45 volts. BC549 C has a wide variety of applications due to its excellent performance in high-frequency applications. It is typically used in a variety of RF applications, from satellite radios to ham radios and short-range radios. It is also used in low-level signal handling applications, such as audio amplifiers, video amplifiers, voltage followers, and logic-level conversions that require a low-power input. The transistor can also be used as a switching device. It can be used for repetitively switching a load on and off and for switching larger powers that have a slow duty cycle. This makes it a valuable component in many power- and light-switching applications. BC549 C is a good choice for use in mobile and battery operated electronic devices. It\'s performance and low power requirements make it ideal for battery-powered circuits, where the low power consumption is an important factor. The working principle of the BC549 C is simple. As in any bipolar transistor, current flows from the base to the emitter and from the collector to the emitter. This current flow is controlled by the amount of current that flows between the base and the emitter, which is usually proportional to the current flowing from the collector and the emitter. The current amplification of the device is proportional to the current flow between the collector and the emitter, which depends on the current between the base and the emitter. When the base terminal is biased, this current will control the collector-emitter current and thus the amplification of the transistor. The BC549 C is an excellent all-purpose device, optimal for use in a broad range of high-frequency or low-level signal handling applications. Its small size makes it ideal for use in compact electronic circuits, while its good performance at high frequencies make it the perfect component for RF applications. Its low voltage and low power consumption make it a great choice for battery-operated circuits.

The specific data is subject to PDF, and the above content is for reference

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