BC548B_J35Z Allicdata Electronics
Allicdata Part #:

BC548B_J35Z-ND

Manufacturer Part#:

BC548B_J35Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 300MHz 500m...
DataSheet: BC548B_J35Z datasheetBC548B_J35Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC548
Description

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BC548B_J35Z Application Field and Working Principle

The BC548B_J35Z is a Transistor - Bipolar (BJT) - Single. This device is used in a wide range of applications. It is a PNP type of transistor. This device has high gain and low noise, making it ideal for many electronic applications. It is designed for high frequency applications and can operate from high frequency to low frequency. It is used in many high speed circuits, as well as in low power audio amplifiers and in small signal amplifiers. The main feature of the BC548B_J35Z is that it has a low noise floor compared to other transistors.

The main application of the BC548B_J35Z is in amplifying small signals. It is a popular choice for low noise circuits as it has a very low noise floor. It can also be used to increase the gain of circuits, such as switching circuits and amplifiers. The device has a high breakdown voltage, which makes it suitable for high voltage applications. Because of its small size and low cost, it is also suitable for large scale applications.

The BC548B_J35Z is a PNP type transistor. It has three pins, labeled base, collector, and emitter. The base is used to control the transistor, while the collector and emitter are used to conduct current. The collector collects current when the base is biased and the emitter releases electrons into the external circuit when the current is applied to the base. The gain of the transistor is determined by the ratio of the collector current to the base voltage. When the base voltage is high, the transistor has a higher gain, and when the base voltage is low, the transistor has a lower gain.

The BC548B_J35Z has a typical forward current gain (hFE) of 200 and an average collector voltage of up to 10V. It is usually operated at temperatures of up to 100°C. The transistor can also be used for low power applications, where the forward current gain and collector voltage is reduced.

The working principle of the BC548B_J35Z is based on the flow of electrons. When the base is biased, the electrons are supplied from the collector to the emitter, and the current is amplified. This amplified current is then passed on to the external circuit. When the current is removed from the external circuit, it is absorbed by the collector and transferred to the base, and this process repeats itself.

The BC548B_J35Z is a very popular transistor for a variety of applications, as it has a high forward current gain and a low noise floor. Its small size and low cost make it ideal for larger scale applications, and it can also be used in low power applications. The device has a high breakdown voltage, making it suitable for high voltage applications. It is also used in many high speed circuits, as well as in low power audio amplifiers. The working principle of the device is based on the flow of electrons, with the current being amplified and then passed on to the external circuit.

The specific data is subject to PDF, and the above content is for reference

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