BC548BG Allicdata Electronics
Allicdata Part #:

BC548BG-ND

Manufacturer Part#:

BC548BG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 300MHz 625m...
DataSheet: BC548BG datasheetBC548BG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC548
Description

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A BC548BG is a bipolar (BJT) single transistor device that excels in several application fields and operates under certain operating principles. Transistors are semiconductor devices that control conductivity between two terminals. In this specific BJT application, they act as current controllers in several applications, especially in low current amplification or switching. The BC548BG is a NPN type device which relies on the flow of both electrons and holes to make it work.

The BC548BG has three terminals, an emitter, a collector, and a base. It is composed of a semiconductor material with impurities that act as charge carriers, namely electrons and holes, when a potential difference is applied across the terminals. Output current is determined through the ratio of the resistances between the collector and the emitter relative to the base, and these resistances are expressed in terms of transistor gain, which is a measure of current amplification.

Typical applications of BC548BG devices include low-frequency amplifier stages and input stages for radio receivers. The device is favored for its excellent switching characteristics, thanks to its relatively low gain-bandwidth product that lends itself to slow-switching applications. Its characteristics include a 0.2A maximum collector current (I_C), a 200mA continuous collector current (I_C), 0.51V collector–emitter saturation voltage (V_CE(sat)), a 200V maximum collector-emitter voltage (V_CE), and a 30V base–emitter breakdown voltage (V_BE).

The BC548BG operates within certain working principles. The ratio of the resistances between the collector and the emitter relative to the base determines the current output of the device, and this is known as transistor gain. Put simply, when a voltage is applied across the base and emitter, a positive base current (I_B) is able to intensify or reduce the current flow in the collector and emitter. When a positive voltage is applied across the base and emitter, it produces a current that opens up holes, allowing electrons to flow from the emitter to the collector, leading to an increased current in the collector-emitter terminal pair.

The BC548BG\'s emitter current (I_E) is determined by the amount of current that flows into the base (I_B) and the gain of the device (h_FE). It can be boiled down to a simple equation: I_E = I_B * h_FE.

The current gain of the BC548BG is also known as h_FE, and it is a major part of the working principle of the device. It is defined as the ratio of the output current to the input current. Put simply, h_FE represents the current amplification offered by the device. In the case of the BC548BG, the device has a h_FE value of 100 at room temperature. This indicates that the device can amplify an input current of 1 mA to up to 100 mA, meaning it is a relatively high gain device.

The BC548BG is an excellent choice when it comes to devices offering low-frequency amplification or switching. Its relatively low gain-bandwidth product and its excellent switching characteristics make it suitable for use in applications requiring a slow-switching device. Thanks to its high current gain, the device is able to control the flow of current between the collector and emitter, making it an ideal choice when amplification is required.

The specific data is subject to PDF, and the above content is for reference

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