BC557AZL1

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 2mA, 5V
Power - Max:	625mW
Frequency - Transition:	320MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	BC557

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Introduction

The BC557AZL1 is a surface-mount single bipolar junction transistor (BJT) which is manufactured by Taiwan Semiconductor Corporation. It is a low-cost device which has a variety of applications, from switching, to amplification and waveform generation. This article looks at the various application fields and working principles of the BC557AZL1 and how it can be used in various applications.

Application Fields and Working Principle

The BC557AZL1 is designed for use in a wide range of applications, from amplifiers, to switches and waveform generators. It can be used in amplifier circuits which provide voltage or current amplification, both of which can be achieved using the BC557AZL1.The BC557AZL1 can also be used as a switch in circuits which employ logic circuits, such as NOR, NAND and OR gates. The transistor acts as a switch by allowing or disallowing electricity to flow through the circuit when a particular logic level is applied to its base.The BC557AZL1 can also be used as a waveform generator. This means the transistor can be used to generate a waveform, by applying a sinusoidal signal to its base. This signal causes the transistor to conduct and output a signal which has the same waveform as the input signal but amplified. The BC557AZL1 operates as a NPN junction transistor. A NPN junction transistor consists of two layers of doped semiconductor material, the base, and the collector. A thin layer of semiconductor material, known as the emitter, is sandwiched between the base and collector. The base-emitter is forward biased and the base-collector is reverse biased. When the base-emitter is forward biased, the electrons which exist in the emitter can flow into the base and into the collector region. This produces a current which depends on the amount of voltage applied to the base emitter junction. The current gain is determined by the ratio of the collector current to the base current.

Conclusion

The BC557AZL1 provides a variety of applications and its low cost is ideal for any budgets. It has the versatility to provide voltage and current amplifications as well as act as a switch and waveform generator. It is a NPN junction transistor and is operated by applying a voltage to the base-emitter junction, which will cause the electrons in the emitter region to flow through the base and into the collector, producing a current which can be used for a variety of applications.

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