BC556B,112 Allicdata Electronics
Allicdata Part #:

BC556B,112-ND

Manufacturer Part#:

BC556B,112

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PNP 65V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 500m...
DataSheet: BC556B,112 datasheetBC556B,112 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC556
Description

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BC556B,112 Application Field and Working Principle

The BC556B,112 or NPN Bipolar Junction Transistor (BJT) is an active semiconductor device used as an amplifier and switch in a wide range of applications. The BC556B,112 is commonly used in audio circuits, power boosters, AM and FM receivers, video systems, and communication networks. It is also used in operational amplifiers and current regulators for a variety of other electronic systems.

The BC556B,112 is a single NPN transistor with two collector and two emitter electrodes and one base electrode. NPN transistors are formed when two N-type layers are sandwiched together with a P-type material. When a current flows through an NPN transistor, it amplifies the current by increasing the voltage across the collector–base junctions. This makes the BC556B,112 excellent for voltage amplification and high-power switching.

The BC556B,112 has a maximum DC collector current rating of 800 mA, and a maximum DC collector–emitter voltage rating of 400 V. It is rated at 250 mW of power dissipation, with a maximum junction temperature of 150°C. The small signal current gain (hFE) of the device ranges from 40 to 200, and the base–emitter voltage (VBE) is between –1.5 V and –6.0 V.

The BC556B,112 works when current is supplied to its base electrode. This current fuels the movement of charge carriers within the transistor, allowing electrons to move from the emitter to the collector. As current passes through the transistor, a voltage drop is created between the collector and the emitter electrodes. This voltage drop amplifies the input voltage and supplies an output voltage in the same direction as the input voltage.

The BC556B,112 is a versatile transistor, suitable for a wide range of applications including amplification, switching, audio, radio frequency (RF), video, and communications. It is used in audio amplifiers, switching supplies, audio mixers, modulators and demodulators, voltage regulators, phase locked melange circuits and power drivers. It is also used as a low-cost amplifier in low-power communication systems and alarms.

The BC556B,112 is a simple and inexpensive NPN transistor. Its low noise, high power rating, and wide current gain range make it a popular choice for a variety of electronic applications. Its ease of use and simple configuration make it a great choice for the novice electronic hobbyist and the experienced engineer alike.

The specific data is subject to PDF, and the above content is for reference

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