Allicdata Part #: | BC557AZL1G-ND |
Manufacturer Part#: |
BC557AZL1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 45V 0.1A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 100mA 320MHz 625m... |
DataSheet: | BC557AZL1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 320MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC557 |
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The BC557AZL1G is an NPN silicon transistors commonly used in amplifying circuits. This transistor provides a medium power gain of 230 and has a low collector-emitter saturation voltage of 0.95V. This device is isomorphic with other silicon NPN transistors and provides a wide range of applications.
Application Field and Working Principle
The BC557AZL1G is commonly used as an amplifier in many circuit designs. These devices are used to amplify audio, video, and digital signals with low noise, high linearity, and low distortion. The commonly used features of this transistor are its high gain-bandwidth product, low input capacitance, low output capacitance, and high collector current. This transistor can also be used as a replacement for other standard silicon NPN transistors such as BC557, BC557L, or BC557A.
The BC557AZL1G transistor is a three-terminal semiconductor device whose collector current is modulated by its base-emitter voltage. The emitter current is determined by the collector current. The base-emitter junction behaves like a small signal diode, and its mutual conductance is determined by the current amplification factor, or ß. This value is specified as hFE, and can be as high as 350 for the BC557AZL1G. The collector-emitter voltage across the device is determined by the base-emitter voltage, and the collector current is dependent on the emitter current.
The maximum collector current in a BC557AZL1G can be up to 75mA, with a maximum collector-emitter voltage of 60V. The maximum power dissipation for the device is 625mW. This device is also suitable for operation in ambient temperatures as low as -65ᵒC to 150ᵒC.
Package Types
The BC557AZL1G is available in many different package types, including leaded (TO-92) and surface-mounted (SOIC-8 and SC-70). The TO-92 package is a 3-pin device, consisting of a standard axial lead with a collector, base, and emitter in a plastic package. The SOIC-8 package is a surface-mount device, consisting of a 8-pin device with leads for DIN, STS, and SOT. The SC-70 package is also a surface-mount device, consisting of a 6-pin device with leads for DIN, STS, and SOT.
Conclusion
The BC557AZL1G is a silicon NPN transistor commonly used as an amplifier circuit with low noise and high linearity. This device is a three-terminal semiconductor device whose collector current is modulated by its base-emitter voltage. This device is available in many different package types, including leaded (TO-92) and surface-mounted (SOIC-8 and SC-70). The maximum collector current in a BC557AZL1G can be up to 75mA, with a maximum collector-emitter voltage of 60V, and a maximum power dissipation of 625mW.
The specific data is subject to PDF, and the above content is for reference
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