BC558BZL1G

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	180 @ 2mA, 5V
Power - Max:	625mW
Frequency - Transition:	360MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	BC558

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Introduction

BC558BZL1G is a PNP Bipolar Junction Transistor (BJT), which belongs to the Single type transistor family. This device is made with an epitaxial planar construction that is suitable for applications in audio amplifiers or switching circuits, where high-performance and low levels of power consumption are desired.

Application Field and Sepcifications

BC558BZL1G is mainly used in low-power amplification and switching applications, such as audio amplifiers, radio frequency (RF) amplifiers, and power switching. This device has a gain of 110-160 and a maximum collector current of 200mA. It has a VCE (collector-emitter voltage) of 40V, and a maximum power dissipation of 500mW. The transit frequency of the transistor is typically 200MHz, and its hFE (forward current gain) ranges from 110 to 160. The junction temperature of the device is rated as -55°C to +150°C.

Working Principle

The BC558BZL1G is a PNP type BJT, which means that it consists of three terminals - emitter, base, and collector. The base of the transistor acts as the supply voltage control and can provide current amplification. The collector of the transistor controls the current flow and the emitter of the transistor conducts the current. The working principle of the transistor is quite simple. When the base terminal is energized, a small amount of current flows from the base to the emitter and activates a larger amount of current to flow from collector to the emitter. This increases the amount of current that is available for the circuit.

Conclusion

BC558BZL1G is an excellent component for applications that require low levels of power consumption and high-performance levels. Its key characteristics, such as high forward current gain and a maximum collector current of 200mA, make it suitable for use in audio amplifiers or switching circuits. Moreover, the PNP type BJT construction provides the transistor with uniform current amplification, and its low operating temperature minimizes heat dissipation.

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