BC550C,116

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BC550C,116 is a bipolar junction transistor from NXP Semiconductors. It is a NPN transistor manufactured on an epitaxial planar silicon chip. This transistor can run between -65 to +175 °C junction temperature and is offered in a TO-92 plastic package. This transistor is widely used in digital and analog circuits, radio frequency (RF) amplifiers, low-noise pre-amplifiers and high-frequency circuits. It is also widely used as an amplifier in telecommunications, military and aerospace applications.

BC550C,116 transistors have three terminals, namely the base, the collector, and the emitter. The typical application of this transistor is through a common emitter configuration wherein the biasing of the emitter and collector is done using resistors. The base of the transistor is biased using a voltage divider with a voltage ranging between 0.3 to 0.7 volts for adequate biasing. The transistor is then used as a switch, where a small bias voltage is applied to the base and the collector voltage begins to drop, allowing the transistor to enter an active region. The collector voltage is then used to control a larger load in the circuit.

The BC550C,116 transistor is characterized by a current amplification factor (beta) of 160 – 320 at Ic = 0.1mA and Vce = 2V. This transistor has a transition frequency of 250 MHz at a collector current of 1 mA and is capable of carrying up to 800 mA collector current. The total power dissipation of this transistor is 625 mW which is more than sufficient for most applications. Its voltage breakdown voltage is also decent at 45V.

The BC550C,116 is a great tool for a variety of electronic designs and applications. Its maximum collector current and low transition frequency allows it to be used in amplifiers, radio frequency (RF) amplifiers and other high frequency circuits. It is also used as a switch in many digital circuits. With its fast switching, low transition frequency and good current gain it is a reliable workhorse for many circuit designs.

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