BC807K-16VL

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BC807K-16VL Application Field and Working Principle

BC807K-16VL is a Transistors - Bipolar (BJT) - Single designed by NXP Semiconductors. It features high voltage capability and makes use of the new PNP technology. The design of the product allows it to be used in a wide range of applications including RF amplifiers, audio amplifiers, and data converters.

The BC807K-16VL is a medium power transistor with a gain of 26.5 maximum and a collector-emitter breakdown voltage of 150V. It is ideal for audio amplifier and radio frequency applications. The device is also well suited for other medium power designs, such as power supply and voltage regulator circuits, LEDs drivings, transceivers, and video circuit designs.

General Characteristics

The BC807K-16VL is a PNP transistor available with a collector-emitter saturation voltage of V _CE(sat) = 140 mV. The maximum collector current Iv = 1A and the maximum power dissipation is 500 mW. For medium power applications the device features a high gain bandwidth product of 1 GHz. It features a low noise level, high stability and a high operating temperature range of -55°C to +150°C.

Application Field

The BC807K-16VL is designed to be used in a wide range of application, including:

• RF amplifier circuits
• Audio amplifier circuits
• LED driver circuits
• Transceiver circuits
• Voltage regulator circuits
• Power supply circuits
• Data converter circuits
• Video circuit designs
• Automotive applications

Working Principle

The BC807K-16VL is a high voltage PNP BJT, designed to be used in a range of medium power applications. It features a maximum collector current of 1A and a high collector-emitter breakdown voltage of 150V. The maximum gain of this device is 26.5. The high voltage capability of this device makes it ideal for use in a range of audio, RF and power related applications.

The BC807K-16VL has a maximum collector-emitter saturation voltage of 140 mV and features a low noise level. As a result, it is ideal for use in audio, RF and data converter applications. The device also features a high stability and a high operating temperature range of -55°C to +150°C.

The device works on the principle of a basic NPN transistor. It is made up of three layers of semiconductor material. One layer acts as an emitter, another as a collector, and the third as a base. These three layers are connected to one another and electrons can be made to flow from one layer to the other. When an electric current is passed through the base layer, the electrons flow from the emitter to the collector, which forms the output current.

The performance of the device is enhanced by the use of the PNP technology, which allows more current to pass through the layers of the transistor than did before. This, in turn, allows more power to be generated and the device to be operated at a higher frequency.

The BC807K-16VL is a versatile device, designed to provide improved performance and durability in a range of medium power applications. It features a high voltage capability, high gain and low noise level. As a result, it is ideal for use in audio, RF and power related applications.

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