BC807UE6327HTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	2 PNP (Dual)
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 100mA, 1V
Power - Max:	330mW
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-74, SOT-457
Supplier Device Package:	PG-SC74-6
Base Part Number:	BC807U

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BC807UE6327HTSA1 Application Field and Working Principle

BC807UE6327HTSA1 is a high-performance, low-power NPN bipolar junction transistor (BJT) array integrated circuit (IC). This transistor array includes three BC807UE6327HTSA1 transistors in a single package, and offers higher linking current density, increased stability, and more efficient switching than other BJT arrays.

Applications

BC807UE6327HTSA1 transistors are well-suited for applications such as low-voltage power amplifiers, digital switches, analog instrument amplifiers, power converters, and signal transmitters. Its small size and high integration capacity make it an attractive solution for radiofrequency (RF) communication systems, digital data transmission systems, and small-level signal processing.

Working Principle

Bipolar junction transistors are three-terminal semiconductor devices that can be used to amplify or switch an electrical signal in an electronic circuit. The signal is typically applied between the base and collector of the transistor, and the amplified signal appears between the collector and emitter. In the BC807UE6327HTSA1, the three transistors share one common emitter, thus allowing the NPN transistors to be connected in series. This enables more current to flow through the transistors in the circuit without needing to increase the power supply voltage. This can be useful in circuits where a combination of high current and low voltage is needed. The transistors can also be connected in parallel, enabling the circuit to operate at a lower voltage while maintaining a high level of current flow. This is useful when a higher current is needed with a lower power supply.

Advantages

The BC807UE6327HTSA1 offers several advantages, including:

• Small size, high integration: The BC807UE6327HTSA1 features a small size, which helps to reduce circuit board size.
• High current density: The BC807UE6327HTSA1 offers a high current density for each transistor, enabling more current to be drawn with lower power consumption.
• Increased stability: The common emitter welded construction of the BC807UE6327HTSA1 helps to increase device stability and reduce power consumption.
• More efficient switching: The BC807UE6327HTSA1 offers faster switching times, which can help reduce power consumption in linked circuits.

Conclusion

The BC807UE6327HTSA1 is a high-performance, low-power NPN bipolar junction transistor array integrated circuit. This transistor array offers several benefits, including high current density, increased stability, and more efficient switching. It is well-suited for applications such as low-voltage power amplifiers, digital switches, analog instrument amplifiers, power converters, and signal transmitters. Its small size and high integration capacity make it a desirable solution for RF communication systems, digital data transmission systems, and small-level signal processing.

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