Allicdata Part #: | BC807K-40R-ND |
Manufacturer Part#: |
BC807K-40R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | BC807K-40/SOT23/TO-236AB |
More Detail: | Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 250mW... |
DataSheet: | BC807K-40R Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 100mA, 1V |
Power - Max: | 250mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB |
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The BC807K-40R is one of the most widely used transistors in the world today. It is a single bipolar junction transistor (BJT) used in many applications ranging from special-purpose industrial electronics to consumer applications. It is designed to operate in a wide range of environments, including low-voltage, low-current and high-current applications. It is also suitable for digital applications such as disk drives, ICs, LEDs and other semiconductor-based products.
The BC807K-40R has an assortment of interesting features. It is constructed from silicon and is available in NPN and PNP configuration. It has a maximum collector current of between 40mA and 50mA. The maximum collector-emitter voltage is usually between 30V and 40V, while the maximum collector-base voltage is between 60V to 75V. Additionally, it has an emitter-base voltage of between 7V to 10V and a maximum operating temperature of 105°C.
The BC807K-40R is primarily used for switching and amplification. In terms of switching applications, it can be used to switch low-voltage current from one component to another, as well as control the flow of an alternating current through an inductive load. For amplification, it can be used to amplify small voltage and current signals, as well as provide regulated current and voltage outputs.
The BC807K-40R is also popular for its low power consumption characteristics. It has low junction capacitance and low thermal resistance, meaning it does not require a great deal of external power to operate properly. Additionally, its low saturation voltage allows it to operate with lower voltage levels than other transistors, making it suitable for applications that operate with lower voltage levels.
The BC807K-40R\'s working principle is fairly straightforward. It utilizes two layers of semiconductor material connected together by a p-n junction. When a positive voltage or current is applied to the base terminal, the amount of electrons that flow between the two layers increases. This in turn causes the current to flow through the collector and emitter terminals, creating an output signal.
The BC807K-40R\'s unique combination of features and its low-power characteristics make it an ideal choice for a variety of applications. Its versatile design makes it suitable for many types of designs and its compact size ensures that it can be used in many places. As such, it has become one of the most popular transistors in the world and is likely to remain so for years to come.
The specific data is subject to PDF, and the above content is for reference
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