BC80740B5003XT

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	250 @ 100mA, 1V
Power - Max:	330mW
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	BC807

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BC80740B5003XT is a surface-mounted, low-power NPN bipolar (BJT) transistor in a plastic SOT-23-3L package. It is often used in portable devices such as mobile phones, wearable technology, and battery-powered applications. This article discusses the application field of BC80740B5003XT and its working principle. ## Application Field BC80740B5003XT is a low-power bipolar transistor that is ideal for a wide range of applications. Its compact SOT-23-3L package enables its use in electronic circuits that require space saving. BC80740B5003XT is designed with the latest technology, so it is well-suited for portable battery applications, such as Bluetooth headsets, medical instruments, and other portable devices. It is also suitable for LED driver circuit applications. BC80740B5003XT can also be used in light switching applications and load switching applications. It is widely used in pulse circuits and power supply circuits. ## Working PrincipleBC80740B5003XT is an NPN type bipolar transistor, which means it consists of two p-type semiconductor layers with a layer of n-type material between them. When a base current flows through the base terminal of the transistor, the electrons move from the base to the collector terminal, causing the collector current to flow. This current is amplified from the base current, resulting in the transistor acting as an amplifier. The working of the transistor can be divided into three regions – active, saturation, and cutoff. In the active region, the collector current will be equal to β times the base current. In the saturation region, the current gain of the transistor is practically infinite. The base current is cut off, resulting in the collector current becoming zero.The BC80740B5003XT has a low base current of 20mA, a collector current of 500mA, and a power rating of 500mW. This makes it an ideal choice for low-power applications. BC80740B5003XT has a low noise level, high speed switching, and low power consumption. It also has a high breakdown voltage, which makes it suitable for high power applications. ## ConclusionBC80740B5003XT is a low-power NPN bipolar transistor with a wide range of applications. It is suitable for low-power circuits as well as high power applications. It is designed with the latest technology and is capable of high speed switching and low noise level. Its low base current and high collector current make it suitable for a variety of applications.

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