BC807K-25VL

Series:	--
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 100mA, 1V
Power - Max:	250mW
Frequency - Transition:	80MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB

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Introduction of BC807K-25VLThe BC807K-25VL is an NPN bipolar junction transistor (BJT) that is commonly used in amplification and switching applications. It is part of a family of NPN transistors, known as the BC807 Series, and its maximum collector current is 25 VL. It is a component that is widely used in amplifier circuits, as well as circuit applications where signals and data need to be amplified or switched between electronics devices. Application Field of the BC807K-25VLThe BC807K-25VL is suitable for any electronic application where signal amplification and switching is required. It is commonly used in audio video amplifiers, transistors for television and radio receivers, instrumentation amplifiers, amplifier circuits for automotive audio, and many other related applications. The BC807K-25VL also finds use in switching and relay applications in the industrial sector, especially where high voltage and current applications are required. Technical Specifications of the BC807K-25VLThe BC807K-25VL has several technical and operational features that make it suitable for these types of applications. It has an operating temperature range of -55°C to 150°C, and its minimum operating voltage is -3V. Its maximum collector current is 25 VL, and its maximum collector power dissipation is 625 mW. The BC807K-25VL has a high common emitter gain of 500, which is ideal for applications that require high power gain. Working Principle of the BC807K-25VLThe BC807K-25VL is an NPN transistor, which means that it uses a P-type semiconductor material for one side and an N-type for the other. It consists of three terminals, called the collector, base, and emitter. When voltage is applied to the base of the transistor, this creates a current flow between the collector and emitter. This current flow is what is used to control the current flow in the circuit. When the base voltage is less than the emitter voltage, the current is off and the circuit is open, while when the base voltage is greater than the emitter voltage, the current is on and the circuit is closed. The working principle of the BC807K-25VL also depends on its maximum collector current of 25 VL. This current is used to adjust the gain of the transistor, and to provide an amplification factor for the circuit. The BC807K-25VL has a high power gain due to its 25 VL, which allows it to be used in high power applications. ConclusionThe BC807K-25VL is an NPN bipolar junction transistor that is suitable for many electronic applications, including signal amplification and switching. Its maximum collector current of 25 VL provides it with a high power gain, making it ideal for high power applications. Its technical specifications and working principle make it an ideal component for a wide range of applications.

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