BC817-25W/MIX

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Application Field and Working Principle of BC817-25W/MIX Transistor

The BC817-25W/MIX is a type of single bipolar junction transistor (BJT) designed for use in a wide range of general-purpose and switching applications. The "MIX" designation indicates that the transistor contains two die types; one complimentary NPN-PNP die, and one circuit protection die. The transistor is available in a surface mount, three-leads SOT-23 package.

Features

• Low Collector-Emitter Saturation Voltage
• High DC Current Gain
• Application Specific Oatherating Protection Circuit
• High Switching Speed
• 3-Lead SOT-23 Package

Application of BC817-25W/MIX

The BC817-25W/MIX is primarily used in a variety of low voltage and low power switching applications, such as low frequency control circuits, audio amplifiers, logic circuits, LED drivers, EMI filters, and more. It is especially well suited for applications where there is a need for low saturation voltage, high switching speed, and low on-resistance.

Working Principle of BC817-25W/MIX

The BC817-25W/MIX is a three-terminal semiconductor device consisting of two separate and distinct transistors, an NPN and a PNP, controlled by a protection circuit integrated onto the same die. The protection circuit is designed to protect the device in the event of excessive peak currents. The NPN portion of the device is a Darlington configuration and the PNP is a standard common emitter configuration.

When a voltage is applied to the base of either transistor, the current allowed through that transistor increases in proportion, allowing the other transistor in the circuit to conduct as well. This results in both transistors passing current through the collector-emitter junction simultaneously. In this way, the BC817-25W/MIX works as a dual-mode switch allowing for high-current operation and low-voltage saturation.

Conclusion

In summary, the BC817-25W/MIX is a single bipolar junction transistor (BJT) that is generally used for a variety of low voltage, low power switching applications. It is composed of two separate transistors connected together and contains a protection circuit for the device in the event of an overload. Additionally, it has a low saturation voltage, high switching speed, and low on-resistance.

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