BC817K40WE6327HTSA1 Allicdata Electronics
Allicdata Part #:

BC817K40WE6327HTSA1TR-ND

Manufacturer Part#:

BC817K40WE6327HTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN 45V 0.5A SOT-323
More Detail: Bipolar (BJT) Transistor NPN 45V 500mA 170MHz 250m...
DataSheet: BC817K40WE6327HTSA1 datasheetBC817K40WE6327HTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 250mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Base Part Number: BC817
Description

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BC817K40WE6327HTSA1 is one of the transistors that fall within the category of Single Bipolar (BJT). It is a low – power and current amplification NPN transistor. This type of transistor used to switch or amplify AC voltage or current. It is also used in circuits where high gain, low capacitance and low noise specifications are required.

The BC817K40WE6327HTSA1 is a low voltage NPN transistor. It can be used for switching and amplification in circuits where the voltage needs to be greater than 5V. The current gain of this transistor is typically between 50 and 400. The power dissipation of this transistor is typically between 500mW and 1W. It is designed for use in circuits that require low voltage and low power.

The BC817K40WE6327HTSA1 has a three lead layout with a collector, base, and emitter. The collector is connected to the positive supply and the emitter is connected to ground. The base is the input point of the transistor, which controls the current that can flow through the collector and emitter. When a voltage is applied to the base, it switches the current on and off, thereby controlling the voltage and current in the circuit.

The working principle of the BC817K40WE6327HTSA1 is based on the properties of semiconductor material. When a small voltage is applied to the base, it causes a weak electric field to be generated. This electric field then induces the flow of current from the collector to the emitter. This current is then amplified by the transistor and can be used to control other circuit components such as resistors and capacitors.

The BC817K40WE6327HTSA1 is commonly used in circuits for power amplification, signal switching, and current limiting. It is used in a variety of applications ranging from audio amplifiers to motor drives. This transistor is also used in circuits that need high gain and low noise specifications, as well as in circuit protection.

In summary, the BC817K40WE6327HTSA1 is a low voltage NPN transistor used mainly in circuits that require low voltage and low power operation. It can be used for switching and amplification in circuits where the voltage needs to be greater than 5V. It is also used in applications that require high gain and low noise specifications, as well as in circuit protection.

The specific data is subject to PDF, and the above content is for reference

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